Trench capacitor and method for producing the same

J. Liu; A.L. Roest; F. Roozeboom; V. Shabro

Trench capacitor and method for producing the same

J. Liu (Inventor), A.L. Roest (Inventor), F. Roozeboom (Inventor), V. Shabro (Inventor)

Plasma & Materials Processing

Research output: Patent › Patent publication

Abstract

A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high- permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance whilst being efficient in utilisation of semiconductor real estate.

Original language	English
Patent number	WO2009144662
Publication status	Published - 3 Dec 2009

Bibliographical note

Also published as:
US8,486,800

Cite this

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title = "Trench capacitor and method for producing the same",

abstract = "A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high- permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance whilst being efficient in utilisation of semiconductor real estate.",

author = "J. Liu and A.L. Roest and F. Roozeboom and V. Shabro",

note = "Also published as: US8,486,800; WO2009144662",

year = "2009",

month = dec,

day = "3",

language = "English",

type = "Patent",

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TY - PAT

T1 - Trench capacitor and method for producing the same

AU - Liu, J.

AU - Roest, A.L.

AU - Roozeboom, F.

AU - Shabro, V.

N1 - Also published as: US8,486,800

PY - 2009/12/3

Y1 - 2009/12/3

N2 - A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high- permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance whilst being efficient in utilisation of semiconductor real estate.

AB - A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high- permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance whilst being efficient in utilisation of semiconductor real estate.

UR - http://v3.espacenet.com/publicationDetails/biblio?DB=EPODOC&adjacent=true&locale=nl_nl&FT=D&date=20091203&CC=WO&NR=2009144662A1&KC=A1

M3 - Patent publication

M1 - WO2009144662

ER -

Trench capacitor and method for producing the same

Abstract

Bibliographical note

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