Abstract
The performance of organic photodetectors is steadily improving, and the specific detectivity, as a key figure of merit, has reached values of 1012–1013 Jones, i.e., comparable to that of silicon diodes but still considerably lower than the intrinsic limit. As with other semiconductor devices, the electrical performance of state-of-the art organic photodiodes (OPDs) is presently determined to a high degree by the presence of chemical impurities or structural defects which create carrier trapping states within the bandgap of organic active layer. This review aims to provide a comprehensive and timely account of trap-assisted charge generation and recombination in OPDs, with emphasis on the impact of these phenomena on photodetector performance parameters such as, noise and dark current density, responsivity, response speed, and ultimately, specific detectivity.
Original language | English |
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Article number | 2300234 |
Number of pages | 18 |
Journal | Advanced Materials Technologies |
Volume | 8 |
Issue number | 16 |
DOIs | |
Publication status | Published - 25 Aug 2023 |
Bibliographical note
Funding Information:The authors acknowledged funding from the Ministry of Education, Culture, and Science (Gravity program 024.001.035) and from Netherlands Organisation for Scientific Research (NWO Spinoza grant).
Funding
The authors acknowledged funding from the Ministry of Education, Culture, and Science (Gravity program 024.001.035) and from Netherlands Organisation for Scientific Research (NWO Spinoza grant).
Funders | Funder number |
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Ministerie van Onderwijs, Cultuur en Wetenschap | 024.001.035 |
Nederlandse Organisatie voor Wetenschappelijk Onderzoek |
Keywords
- bulk heterojunctions
- charge recombination
- organic photodetectors
- trap states