Transmitted ion energy loss distributions to detect cluster formation in silicon

L.J.M. Selen, A. Loon, van, L.J. IJzendoorn, van, M.J.A. Voigt, de

    Research output: Contribution to journalArticleAcademicpeer-review

    1 Downloads (Pure)

    Abstract

    The energy loss distribution of He+ ions transmitted through a 5.7 +- 0.2 mm thick Si crystal was measured and simulated with the Monte Carlo channeling simulation code FLUX. A general resemblance between the measured and simulated energy loss distributions was obtained after incorporation of an energy dependent energy loss in the simulation program. The energy loss calcns. were used to investigate the feasibility to detect the presence of clusters of light element dopants in a host crystal from the shape of the energy loss distribution, with transmission ion channeling. A curved crystal structure was used as a model for a region in the host crystal with clusters. The presence of the curvature does have a large influence on the transmitted energy distribution, which offers the possibility to det. the presence of dopant clusters in a host crystal with transmission ion channeling
    Original languageEnglish
    Pages (from-to)479-488
    JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Volume194
    Issue number4
    DOIs
    Publication statusPublished - 2002

    Fingerprint

    Dive into the research topics of 'Transmitted ion energy loss distributions to detect cluster formation in silicon'. Together they form a unique fingerprint.

    Cite this