Transmission of pillar-based photonic crystal waveguides in InP technology

A.A.M. Kok, E.J. Geluk, B. Docter, J.J.G.M. Tol, van der, R. Nötzel, M.K. Smit, R.G.F. Baets

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Waveguides based on line defects in pillar photonic crystals have been fabricated in InP/InGaAsP/InP technology. Transmission measurements of different line defects are reported. The results can be explained by comparison with two-dimensional band diagram simulations. The losses increase substantially at mode crossings and in the slow light regime. The agreement with the band diagrams implies a good control on the dimensions of the fabricated features, which is an important step in the actual application of these devices in photonic integrated circuits
Original languageEnglish
Article number201109
Pages (from-to)201109-1/3
Number of pages3
JournalApplied Physics Letters
Issue number20
Publication statusPublished - 2007


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