Transmission of pillar-based photonic crystal waveguides in InP technology

A.A.M. Kok; E.J. Geluk; B. Docter; J.J.G.M. Tol, van der; R. Nötzel; M.K. Smit; R.G.F. Baets

doi:10.1063/1.2814041

Transmission of pillar-based photonic crystal waveguides in InP technology

A.A.M. Kok, E.J. Geluk, B. Docter, J.J.G.M. Tol, van der, R. Nötzel, M.K. Smit, R.G.F. Baets

Research output: Contribution to journal › Article › Academic › peer-review

15 Citations (Scopus)

210 Downloads (Pure)

Abstract

Waveguides based on line defects in pillar photonic crystals have been fabricated in InP/InGaAsP/InP technology. Transmission measurements of different line defects are reported. The results can be explained by comparison with two-dimensional band diagram simulations. The losses increase substantially at mode crossings and in the slow light regime. The agreement with the band diagrams implies a good control on the dimensions of the fabricated features, which is an important step in the actual application of these devices in photonic integrated circuits

Original language	English
Article number	201109
Pages (from-to)	201109-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	91
Issue number	20
DOIs	https://doi.org/10.1063/1.2814041
Publication status	Published - 2007

Access to Document

10.1063/1.2814041

Metis212483Final published version, 274 KB

Cite this

@article{18a93d35200d4d798151b8b1300c13d2,

title = "Transmission of pillar-based photonic crystal waveguides in InP technology",

abstract = "Waveguides based on line defects in pillar photonic crystals have been fabricated in InP/InGaAsP/InP technology. Transmission measurements of different line defects are reported. The results can be explained by comparison with two-dimensional band diagram simulations. The losses increase substantially at mode crossings and in the slow light regime. The agreement with the band diagrams implies a good control on the dimensions of the fabricated features, which is an important step in the actual application of these devices in photonic integrated circuits",

author = "A.A.M. Kok and E.J. Geluk and B. Docter and {Tol, van der}, J.J.G.M. and R. N{\"o}tzel and M.K. Smit and R.G.F. Baets",

year = "2007",

doi = "10.1063/1.2814041",

language = "English",

volume = "91",

pages = "201109--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Transmission of pillar-based photonic crystal waveguides in InP technology

AU - Kok, A.A.M.

AU - Geluk, E.J.

AU - Docter, B.

AU - Tol, van der, J.J.G.M.

AU - Nötzel, R.

AU - Smit, M.K.

AU - Baets, R.G.F.

PY - 2007

Y1 - 2007

N2 - Waveguides based on line defects in pillar photonic crystals have been fabricated in InP/InGaAsP/InP technology. Transmission measurements of different line defects are reported. The results can be explained by comparison with two-dimensional band diagram simulations. The losses increase substantially at mode crossings and in the slow light regime. The agreement with the band diagrams implies a good control on the dimensions of the fabricated features, which is an important step in the actual application of these devices in photonic integrated circuits

AB - Waveguides based on line defects in pillar photonic crystals have been fabricated in InP/InGaAsP/InP technology. Transmission measurements of different line defects are reported. The results can be explained by comparison with two-dimensional band diagram simulations. The losses increase substantially at mode crossings and in the slow light regime. The agreement with the band diagrams implies a good control on the dimensions of the fabricated features, which is an important step in the actual application of these devices in photonic integrated circuits

U2 - 10.1063/1.2814041

DO - 10.1063/1.2814041

M3 - Article

SN - 0003-6951

VL - 91

SP - 201109-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 201109

ER -

Transmission of pillar-based photonic crystal waveguides in InP technology

Abstract

Access to Document

Fingerprint

Cite this