Transition matrix element and recombination mechanism of hexagonal sige

Alain Dijkstra, Marvin van Tilburg, Elham Fadaly, V.T. van Lange, Marcel A. Verheijen, Jens Renè Suckert, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti, David Busse, Jonathan J. Finley, Erik P.A.M. Bakkers, Jos E.M. Haverkort

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.
Original languageEnglish
Title of host publication2020 Conference on Lasers and Electro-Optics (CLEO)
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)978-1-943580-76-7
Publication statusPublished - 10 Sep 2020
Event2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States
Duration: 10 May 202015 May 2020

Conference

Conference2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/TerritoryUnited States
CitySan Jose
Period10/05/2015/05/20

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