Transition matrix element and recombination mechanism of hexagonal sige

Alain Dijkstra; Marvin van Tilburg; Elham Fadaly; V.T. van Lange; Marcel A. Verheijen; Jens Renè  Suckert; Claudia Rödl; Jürgen Furthmüller; Friedhelm Bechstedt; Silvana Botti; David Busse; Jonathan J. Finley; Erik P.A.M. Bakkers; Jos E.M. Haverkort

Transition matrix element and recombination mechanism of hexagonal sige

Alain Dijkstra, Marvin van Tilburg, Elham Fadaly, V.T. van Lange, Marcel A. Verheijen, Jens Renè Suckert, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti, David Busse, Jonathan J. Finley, Erik P.A.M. Bakkers, Jos E.M. Haverkort

Research output: Contribution to conference › Paper › Academic

Abstract

Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

Original language	English
Publication status	Published - May 2020
Event	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States Duration: 10 May 2020 → 15 May 2020

Conference

Conference	2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country	United States
City	San Jose
Period	10/05/20 → 15/05/20

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Dijkstra, A., van Tilburg, M., Fadaly, E., van Lange, V. T., Verheijen, M. A., Suckert, J. R., Rödl, C., Furthmüller, J., Bechstedt, F., Botti, S., Busse, D., Finley, J. J., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2020). Transition matrix element and recombination mechanism of hexagonal sige. Paper presented at 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, United States.

Dijkstra, Alain ; van Tilburg, Marvin ; Fadaly, Elham ; van Lange, V.T. ; Verheijen, Marcel A. ; Suckert, Jens Renè ; Rödl, Claudia ; Furthmüller, Jürgen ; Bechstedt, Friedhelm ; Botti, Silvana ; Busse, David ; Finley, Jonathan J. ; Bakkers, Erik P.A.M. ; Haverkort, Jos E.M. / Transition matrix element and recombination mechanism of hexagonal sige. Paper presented at 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, United States.

@conference{01dfd7f2f90f4892a05974055f85bfcf,

title = "Transition matrix element and recombination mechanism of hexagonal sige",

abstract = "Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-W{\"u}rfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken. ",

author = "Alain Dijkstra and {van Tilburg}, Marvin and Elham Fadaly and {van Lange}, V.T. and Verheijen, {Marcel A.} and Suckert, {Jens Ren{\`e}} and Claudia R{\"o}dl and J{\"u}rgen Furthm{\"u}ller and Friedhelm Bechstedt and Silvana Botti and David Busse and Finley, {Jonathan J.} and Bakkers, {Erik P.A.M.} and Haverkort, {Jos E.M.}",

year = "2020",

month = may,

language = "English",

note = "2020 Conference on Lasers and Electro-Optics, CLEO 2020 ; Conference date: 10-05-2020 Through 15-05-2020",

}

Dijkstra, A , van Tilburg, M , Fadaly, E , van Lange, VT , Verheijen, MA, Suckert, JR, Rödl, C, Furthmüller, J, Bechstedt, F, Botti, S, Busse, D, Finley, JJ, Bakkers, EPAM & Haverkort, JEM 2020, 'Transition matrix element and recombination mechanism of hexagonal sige', Paper presented at 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, United States, 10/05/20 - 15/05/20.

Transition matrix element and recombination mechanism of hexagonal sige. / Dijkstra, Alain ; van Tilburg, Marvin ; Fadaly, Elham ; van Lange, V.T.; Verheijen, Marcel A.; Suckert, Jens Renè ; Rödl, Claudia; Furthmüller, Jürgen; Bechstedt, Friedhelm; Botti, Silvana; Busse, David; Finley, Jonathan J.; Bakkers, Erik P.A.M.; Haverkort, Jos E.M.

2020. Paper presented at 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, United States.

Research output: Contribution to conference › Paper › Academic

TY - CONF

T1 - Transition matrix element and recombination mechanism of hexagonal sige

AU - Dijkstra, Alain

AU - van Tilburg, Marvin

AU - Fadaly, Elham

AU - van Lange, V.T.

AU - Verheijen, Marcel A.

AU - Suckert, Jens Renè

AU - Rödl, Claudia

AU - Furthmüller, Jürgen

AU - Bechstedt, Friedhelm

AU - Botti, Silvana

AU - Busse, David

AU - Finley, Jonathan J.

AU - Bakkers, Erik P.A.M.

AU - Haverkort, Jos E.M.

PY - 2020/5

Y1 - 2020/5

N2 - Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

AB - Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

M3 - Paper

T2 - 2020 Conference on Lasers and Electro-Optics, CLEO 2020

Y2 - 10 May 2020 through 15 May 2020

ER -