Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

Alain Dijkstra, Marvin van Tilburg, Elham Fadaly, V.T. van Lange, Marcel A. Verheijen, Jens Renè Suckert, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti, David Busse, Jonathan J. Finley, Erik P.A.M. Bakkers, Jos E.M. Haverkort

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

Original languageEnglish
Title of host publication2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)978-1-943580-76-7
DOIs
Publication statusPublished - 10 Sept 2020
Event2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States
Duration: 10 May 202015 May 2020

Conference

Conference2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/TerritoryUnited States
CitySan Jose
Period10/05/2015/05/20

Bibliographical note

Publisher Copyright:
© OSA 2020 © 2020 The Author(s).

Funding

In conclusion, the band folding of the L-minimum towards the Γ-point turns the indirect bandgap of cubic SiGe into a direct semiconductor in the hexagonal crystal phase. Hex-SiGe is thus a silicon compatible semiconductor with optical properties comparable to InP. This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No 735008 (SiLAS) and the Dutch Organization for Scientific Research (NWO).

FundersFunder number
Dutch Organization for Scientific Research
European Union 's Horizon 2020 - Research and Innovation Framework Programme735008
SiLAS
Nederlandse Organisatie voor Wetenschappelijk Onderzoek

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