Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

Alain Dijkstra; Marvin van Tilburg; Elham Fadaly; V.T. van Lange; Marcel A. Verheijen; Jens Renè  Suckert; Claudia Rödl; Jürgen Furthmüller; Friedhelm Bechstedt; Silvana Botti; David Busse; Jonathan J. Finley; Erik P.A.M. Bakkers; Jos E.M. Haverkort

doi:10.1364/CLEO_AT.2020.JW2F.3

Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

Alain Dijkstra, Marvin van Tilburg, Elham Fadaly, V.T. van Lange, Marcel A. Verheijen, Jens Renè Suckert, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti, David Busse, Jonathan J. Finley, Erik P.A.M. Bakkers, Jos E.M. Haverkort

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

Original language	English
Title of host publication	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	978-1-943580-76-7
DOIs	https://doi.org/10.1364/CLEO_AT.2020.JW2F.3
Publication status	Published - 10 Sept 2020
Event	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States Duration: 10 May 2020 → 15 May 2020

Conference

Conference	2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/Territory	United States
City	San Jose
Period	10/05/20 → 15/05/20

Bibliographical note

Publisher Copyright:
© OSA 2020 © 2020 The Author(s).

Funding

In conclusion, the band folding of the L-minimum towards the Γ-point turns the indirect bandgap of cubic SiGe into a direct semiconductor in the hexagonal crystal phase. Hex-SiGe is thus a silicon compatible semiconductor with optical properties comparable to InP. This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No 735008 (SiLAS) and the Dutch Organization for Scientific Research (NWO).

Funders	Funder number
European Union's Horizon 2020 - Research and Innovation Framework Programme	735008
Nederlandse Organisatie voor Wetenschappelijk Onderzoek

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10.1364/CLEO_AT.2020.JW2F.3

https://ieeexplore.ieee.org/document/9193825

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Dijkstra, A., van Tilburg, M., Fadaly, E., van Lange, V. T., Verheijen, M. A., Suckert, J. R., Rödl, C., Furthmüller, J., Bechstedt, F., Botti, S., Busse, D., Finley, J. J., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2020). Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe. In 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings Article JW2F.3 Institute of Electrical and Electronics Engineers. https://doi.org/10.1364/CLEO_AT.2020.JW2F.3

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title = "Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe",

abstract = "Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-W{\"u}rfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.",

author = "Alain Dijkstra and \{van Tilburg\}, Marvin and Elham Fadaly and \{van Lange\}, V.T. and Verheijen, \{Marcel A.\} and Suckert, \{Jens Ren{\`e}\} and Claudia R{\"o}dl and J{\"u}rgen Furthm{\"u}ller and Friedhelm Bechstedt and Silvana Botti and David Busse and Finley, \{Jonathan J.\} and Bakkers, \{Erik P.A.M.\} and Haverkort, \{Jos E.M.\}",

note = "Publisher Copyright: {\textcopyright} OSA 2020 {\textcopyright} 2020 The Author(s).; 2020 Conference on Lasers and Electro-Optics, CLEO 2020 ; Conference date: 10-05-2020 Through 15-05-2020",

year = "2020",

month = sep,

day = "10",

doi = "10.1364/CLEO\_AT.2020.JW2F.3",

language = "English",

booktitle = "2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

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Dijkstra, A, van Tilburg, M, Fadaly, E, van Lange, VT , Verheijen, MA, Suckert, JR, Rödl, C, Furthmüller, J, Bechstedt, F, Botti, S, Busse, D, Finley, JJ, Bakkers, EPAM & Haverkort, JEM 2020, Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe. in 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings., JW2F.3, Institute of Electrical and Electronics Engineers, 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, California, United States, 10/05/20. https://doi.org/10.1364/CLEO_AT.2020.JW2F.3

Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe. / Dijkstra, Alain; van Tilburg, Marvin; Fadaly, Elham et al.
2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings. Institute of Electrical and Electronics Engineers, 2020. JW2F.3.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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M3 - Conference contribution

AN - SCOPUS:85095112032

BT - 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers

T2 - 2020 Conference on Lasers and Electro-Optics, CLEO 2020

Y2 - 10 May 2020 through 15 May 2020

ER -

Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

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