Abstract
Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.
Original language | English |
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Title of host publication | 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers |
Number of pages | 2 |
ISBN (Electronic) | 978-1-943580-76-7 |
DOIs | |
Publication status | Published - 10 Sept 2020 |
Event | 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States Duration: 10 May 2020 → 15 May 2020 |
Conference
Conference | 2020 Conference on Lasers and Electro-Optics, CLEO 2020 |
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Country/Territory | United States |
City | San Jose |
Period | 10/05/20 → 15/05/20 |
Bibliographical note
Publisher Copyright:© OSA 2020 © 2020 The Author(s).
Funding
In conclusion, the band folding of the L-minimum towards the Γ-point turns the indirect bandgap of cubic SiGe into a direct semiconductor in the hexagonal crystal phase. Hex-SiGe is thus a silicon compatible semiconductor with optical properties comparable to InP. This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No 735008 (SiLAS) and the Dutch Organization for Scientific Research (NWO).
Funders | Funder number |
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European Union's Horizon 2020 - Research and Innovation Framework Programme | 735008 |
Nederlandse Organisatie voor Wetenschappelijk Onderzoek |