Transient enhanced diffusion of B at low temperatures under extrinsic conditions

L.F. Giles, B. Colombeau, N. Cowern, W. Molzer, H. Schaefer, K.H. Bach, P. Haibach, F. Roozeboom

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)

Abstract

Transient enhanced diffusion of B in silicon is modelled at temperatures down to 500 °C, using a simplified model of self-interstitial clusters to describe the time evolution of the self-interstitial supersaturation, S. The model is highly predictive, providing an accurate description of diffusion both in the peak and tail regions of B marker layers, over a wide range of annealing conditions. The model is well adapted for implementation into existing 2D commercial simulation tools. Fundamental parameters of atomic-scale B diffusion were extracted for the first time at T = 500 °C, under both intrinsic and extrinsic conditions.

Original languageEnglish
Pages (from-to)618-627
Number of pages10
JournalSolid-State Electronics
Volume49
Issue number4
DOIs
Publication statusPublished - 1 Apr 2005
Externally publishedYes

Keywords

  • Dopant diffusion
  • Modelling
  • Point defect clustering
  • TED

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