Towards vertical III-V nanowire devices

M.T. Borgström; W.G.G. Immink; B. Ketelaars; M.A. Verheijen; R.E. Algra; E.P.A.M. Bakkers

doi:10.1109/IWPSD.2007.4472513

Towards vertical III-V nanowire devices

M.T. Borgström, W.G.G. Immink, B. Ketelaars, M.A. Verheijen, R.E. Algra, E.P.A.M. Bakkers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Investigation and understanding of growth parameters determining nanowire growth rates is necessary. For vertical architecture design relying on closely-spaced nanowire-based devices, absolute control of growth rates and wire (device) dimensions is required. Heterostructured nanowires where the segment dimensions critically determine quantization effects and thus the (opto) electronic properties of the wires were synthesized.

Original language	English
Title of host publication	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices (IWPSD), Mumbai, India, 16-20 December 2007
Pages	343-
DOIs	https://doi.org/10.1109/IWPSD.2007.4472513
Publication status	Published - 2007

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10.1109/IWPSD.2007.4472513

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title = "Towards vertical III-V nanowire devices",

abstract = "Investigation and understanding of growth parameters determining nanowire growth rates is necessary. For vertical architecture design relying on closely-spaced nanowire-based devices, absolute control of growth rates and wire (device) dimensions is required. Heterostructured nanowires where the segment dimensions critically determine quantization effects and thus the (opto) electronic properties of the wires were synthesized.",

author = "M.T. Borgstr{\"o}m and W.G.G. Immink and B. Ketelaars and M.A. Verheijen and R.E. Algra and E.P.A.M. Bakkers",

year = "2007",

doi = "10.1109/IWPSD.2007.4472513",

language = "English",

isbn = "978-1-4244-1728-5",

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booktitle = "Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices (IWPSD), Mumbai, India, 16-20 December 2007",

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AU - Borgström, M.T.

AU - Immink, W.G.G.

AU - Ketelaars, B.

AU - Verheijen, M.A.

AU - Algra, R.E.

AU - Bakkers, E.P.A.M.

PY - 2007

Y1 - 2007

N2 - Investigation and understanding of growth parameters determining nanowire growth rates is necessary. For vertical architecture design relying on closely-spaced nanowire-based devices, absolute control of growth rates and wire (device) dimensions is required. Heterostructured nanowires where the segment dimensions critically determine quantization effects and thus the (opto) electronic properties of the wires were synthesized.

AB - Investigation and understanding of growth parameters determining nanowire growth rates is necessary. For vertical architecture design relying on closely-spaced nanowire-based devices, absolute control of growth rates and wire (device) dimensions is required. Heterostructured nanowires where the segment dimensions critically determine quantization effects and thus the (opto) electronic properties of the wires were synthesized.

U2 - 10.1109/IWPSD.2007.4472513

DO - 10.1109/IWPSD.2007.4472513

M3 - Conference contribution

SN - 978-1-4244-1728-5

SP - 343-

BT - Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices (IWPSD), Mumbai, India, 16-20 December 2007

ER -

Towards vertical III-V nanowire devices

Abstract

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