Towards all-electrical spin injection and detection in GaAs

J.J.H.M. Schoonus; O. Kurnosikov; H.J.M. Swagten; B. Koopmans; E.J. Geluk; F. Karouta; W. Roy, van; G. Borghs

Towards all-electrical spin injection and detection in GaAs

J.J.H.M. Schoonus, O. Kurnosikov, H.J.M. Swagten, B. Koopmans, E.J. Geluk, F. Karouta, W. Roy, van, G. Borghs

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx/CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.

Original language	English
Title of host publication	Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan
Place of Publication	Sendai, Japan
Publication status	Published - 2006
Event	4th International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-IV), August 15-18, 2006, Sendai, Japan - Sendai, Japan Duration: 15 Aug 2006 → 18 Aug 2006

Conference

Conference	4th International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-IV), August 15-18, 2006, Sendai, Japan
Abbreviated title	PASPS-IV
Country	Japan
City	Sendai
Period	15/08/06 → 18/08/06

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Schoonus, J.J.H.M. ; Kurnosikov, O. ; Swagten, H.J.M. ; Koopmans, B. ; Geluk, E.J. ; Karouta, F. ; Roy, van, W. ; Borghs, G. / Towards all-electrical spin injection and detection in GaAs. Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan. Sendai, Japan, 2006.

@inproceedings{e3937ac1704449bfa139d26ce0f5dd6c,

title = "Towards all-electrical spin injection and detection in GaAs",

abstract = "We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx/CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.",

author = "J.J.H.M. Schoonus and O. Kurnosikov and H.J.M. Swagten and B. Koopmans and E.J. Geluk and F. Karouta and {Roy, van}, W. and G. Borghs",

year = "2006",

language = "English",

booktitle = "Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan",

note = "4th International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-IV), August 15-18, 2006, Sendai, Japan, PASPS-IV ; Conference date: 15-08-2006 Through 18-08-2006",

}

Schoonus, JJHM, Kurnosikov, O, Swagten, HJM , Koopmans, B, Geluk, EJ, Karouta, F, Roy, van, W & Borghs, G 2006, Towards all-electrical spin injection and detection in GaAs. in Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan. Sendai, Japan, 4th International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-IV), August 15-18, 2006, Sendai, Japan, Sendai, Japan, 15/08/06.

Towards all-electrical spin injection and detection in GaAs. / Schoonus, J.J.H.M.; Kurnosikov, O.; Swagten, H.J.M.; Koopmans, B.; Geluk, E.J.; Karouta, F.; Roy, van, W.; Borghs, G.

Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan. Sendai, Japan, 2006.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Towards all-electrical spin injection and detection in GaAs

AU - Schoonus, J.J.H.M.

AU - Kurnosikov, O.

AU - Swagten, H.J.M.

AU - Koopmans, B.

AU - Geluk, E.J.

AU - Karouta, F.

AU - Roy, van, W.

AU - Borghs, G.

PY - 2006

Y1 - 2006

N2 - We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx/CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.

AB - We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx/CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.

M3 - Conference contribution

BT - Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan

CY - Sendai, Japan

T2 - 4th International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-IV), August 15-18, 2006, Sendai, Japan

Y2 - 15 August 2006 through 18 August 2006

ER -