Towards all-electrical spin injection and detection in GaAs

J.J.H.M. Schoonus, O. Kurnosikov, H.J.M. Swagten, B. Koopmans, E.J. Geluk, F. Karouta, W. Roy, van, G. Borghs

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx/CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.
LanguageEnglish
Title of host publicationProceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan
Place of PublicationSendai, Japan
StatePublished - 2006
Event4th International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-IV), August 15-18, 2006, Sendai, Japan - Sendai, Japan
Duration: 15 Aug 200618 Aug 2006

Conference

Conference4th International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-IV), August 15-18, 2006, Sendai, Japan
Abbreviated titlePASPS-IV
CountryJapan
CitySendai
Period15/08/0618/08/06

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tunnels
injection
electrodes
high resistance
injectors
retarding
magnetic properties
conductivity
requirements
oxides
causes
detectors
products
metals

Cite this

Schoonus, J. J. H. M., Kurnosikov, O., Swagten, H. J. M., Koopmans, B., Geluk, E. J., Karouta, F., ... Borghs, G. (2006). Towards all-electrical spin injection and detection in GaAs. In Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan Sendai, Japan.
Schoonus, J.J.H.M. ; Kurnosikov, O. ; Swagten, H.J.M. ; Koopmans, B. ; Geluk, E.J. ; Karouta, F. ; Roy, van, W. ; Borghs, G./ Towards all-electrical spin injection and detection in GaAs. Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan. Sendai, Japan, 2006.
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title = "Towards all-electrical spin injection and detection in GaAs",
abstract = "We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx/CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.",
author = "J.J.H.M. Schoonus and O. Kurnosikov and H.J.M. Swagten and B. Koopmans and E.J. Geluk and F. Karouta and {Roy, van}, W. and G. Borghs",
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Schoonus, JJHM, Kurnosikov, O, Swagten, HJM, Koopmans, B, Geluk, EJ, Karouta, F, Roy, van, W & Borghs, G 2006, Towards all-electrical spin injection and detection in GaAs. in Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan. Sendai, Japan, 4th International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-IV), August 15-18, 2006, Sendai, Japan, Sendai, Japan, 15/08/06.

Towards all-electrical spin injection and detection in GaAs. / Schoonus, J.J.H.M.; Kurnosikov, O.; Swagten, H.J.M.; Koopmans, B.; Geluk, E.J.; Karouta, F.; Roy, van, W.; Borghs, G.

Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan. Sendai, Japan, 2006.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Towards all-electrical spin injection and detection in GaAs

AU - Schoonus,J.J.H.M.

AU - Kurnosikov,O.

AU - Swagten,H.J.M.

AU - Koopmans,B.

AU - Geluk,E.J.

AU - Karouta,F.

AU - Roy, van,W.

AU - Borghs,G.

PY - 2006

Y1 - 2006

N2 - We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx/CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.

AB - We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx/CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.

M3 - Conference contribution

BT - Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan

CY - Sendai, Japan

ER -

Schoonus JJHM, Kurnosikov O, Swagten HJM, Koopmans B, Geluk EJ, Karouta F et al. Towards all-electrical spin injection and detection in GaAs. In Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan. Sendai, Japan. 2006.