Towards all-electrical spin injection and detection in GaAs

J.J.H.M. Schoonus, O. Kurnosikov, H.J.M. Swagten, B. Koopmans, E.J. Geluk, F. Karouta, W. Roy, van, G. Borghs

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)

Abstract

We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx /CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.
LanguageEnglish
Pages4176-4179
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume3
Issue number12
DOIs
StatePublished - 2006

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tunnels
injection
electrodes
high resistance
injectors
retarding
magnetic properties
conductivity
requirements
oxides
causes
detectors
products
metals

Cite this

Schoonus, J.J.H.M. ; Kurnosikov, O. ; Swagten, H.J.M. ; Koopmans, B. ; Geluk, E.J. ; Karouta, F. ; Roy, van, W. ; Borghs, G./ Towards all-electrical spin injection and detection in GaAs. In: Physica Status Solidi C: Conferences. 2006 ; Vol. 3, No. 12. pp. 4176-4179
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Schoonus, JJHM, Kurnosikov, O, Swagten, HJM, Koopmans, B, Geluk, EJ, Karouta, F, Roy, van, W & Borghs, G 2006, 'Towards all-electrical spin injection and detection in GaAs' Physica Status Solidi C: Conferences, vol. 3, no. 12, pp. 4176-4179. DOI: 10.1002/pssc.200672818

Towards all-electrical spin injection and detection in GaAs. / Schoonus, J.J.H.M.; Kurnosikov, O.; Swagten, H.J.M.; Koopmans, B.; Geluk, E.J.; Karouta, F.; Roy, van, W.; Borghs, G.

In: Physica Status Solidi C: Conferences, Vol. 3, No. 12, 2006, p. 4176-4179.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Schoonus,J.J.H.M.

AU - Kurnosikov,O.

AU - Swagten,H.J.M.

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AU - Geluk,E.J.

AU - Karouta,F.

AU - Roy, van,W.

AU - Borghs,G.

PY - 2006

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AB - We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx /CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.

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DO - 10.1002/pssc.200672818

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SP - 4176

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T2 - Physica Status Solidi C: Conferences

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