Abstract
| Language | English |
|---|---|
| Pages | 4176-4179 |
| Number of pages | 4 |
| Journal | Physica Status Solidi C: Conferences |
| Volume | 3 |
| Issue number | 12 |
| DOIs | |
| State | Published - 2006 |
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Towards all-electrical spin injection and detection in GaAs. / Schoonus, J.J.H.M.; Kurnosikov, O.; Swagten, H.J.M.; Koopmans, B.; Geluk, E.J.; Karouta, F.; Roy, van, W.; Borghs, G.
In: Physica Status Solidi C: Conferences, Vol. 3, No. 12, 2006, p. 4176-4179.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Towards all-electrical spin injection and detection in GaAs
AU - Schoonus,J.J.H.M.
AU - Kurnosikov,O.
AU - Swagten,H.J.M.
AU - Koopmans,B.
AU - Geluk,E.J.
AU - Karouta,F.
AU - Roy, van,W.
AU - Borghs,G.
PY - 2006
Y1 - 2006
N2 - We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx /CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.
AB - We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx /CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.
U2 - 10.1002/pssc.200672818
DO - 10.1002/pssc.200672818
M3 - Article
VL - 3
SP - 4176
EP - 4179
JO - Physica Status Solidi C: Conferences
T2 - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1610-1634
IS - 12
ER -