Towards a Hexagonal SiGe Semiconductor Laser

M. A.J. van Tilburg, A. Dijkstra, E. M.T. Fadaly, V.T. van Lange, M. A. Verheijen, J. R. Suckert, C. Rodl, J. Furthmuller, F. Bechstedt, S. Botti, D. Busse, J. J. Finley, E. P.A.M. Bakkers, J. E.M. Haverkort

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.

Original languageEnglish
Title of host publication2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)9781943580767
Publication statusPublished - May 2020
Event2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States
Duration: 10 May 202015 May 2020

Conference

Conference2020 Conference on Lasers and Electro-Optics, CLEO 2020
CountryUnited States
CitySan Jose
Period10/05/2015/05/20

Fingerprint Dive into the research topics of 'Towards a Hexagonal SiGe Semiconductor Laser'. Together they form a unique fingerprint.

Cite this