Towards a Hexagonal SiGe Semiconductor Laser

M. A.J. van Tilburg; A. Dijkstra; E. M.T. Fadaly; V.T. van Lange; M. A. Verheijen; J. R. Suckert; C. Rodl; J. Furthmuller; F. Bechstedt; S. Botti; D. Busse; J. J. Finley; E. P.A.M. Bakkers; J. E.M. Haverkort

Towards a Hexagonal SiGe Semiconductor Laser

M. A.J. van Tilburg, A. Dijkstra, E. M.T. Fadaly, V.T. van Lange, M. A. Verheijen, J. R. Suckert, C. Rodl, J. Furthmuller, F. Bechstedt, S. Botti, D. Busse, J. J. Finley, E. P.A.M. Bakkers, J. E.M. Haverkort

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.

Original language	English
Title of host publication	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	9781943580767
Publication status	Published - May 2020
Event	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States Duration: 10 May 2020 → 15 May 2020

Conference

Conference	2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/Territory	United States
City	San Jose
Period	10/05/20 → 15/05/20

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Cite this

van Tilburg, M. A. J., Dijkstra, A., Fadaly, E. M. T., van Lange, V. T., Verheijen, M. A., Suckert, J. R., Rodl, C., Furthmuller, J., Bechstedt, F., Botti, S., Busse, D., Finley, J. J., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2020). Towards a Hexagonal SiGe Semiconductor Laser. In 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings [9192798] Institute of Electrical and Electronics Engineers. https://ieeexplore.ieee.org/document/9192798

@inproceedings{78fb4908299e46b09e42ebf33e5549a6,

title = "Towards a Hexagonal SiGe Semiconductor Laser",

abstract = "Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.",

author = "{van Tilburg}, {M. A.J.} and A. Dijkstra and Fadaly, {E. M.T.} and {van Lange}, V.T. and Verheijen, {M. A.} and Suckert, {J. R.} and C. Rodl and J. Furthmuller and F. Bechstedt and S. Botti and D. Busse and Finley, {J. J.} and Bakkers, {E. P.A.M.} and Haverkort, {J. E.M.}",

year = "2020",

month = may,

language = "English",

booktitle = "2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2020 Conference on Lasers and Electro-Optics, CLEO 2020 ; Conference date: 10-05-2020 Through 15-05-2020",

}

van Tilburg, MAJ, Dijkstra, A, Fadaly, EMT, van Lange, VT , Verheijen, MA, Suckert, JR, Rodl, C, Furthmuller, J, Bechstedt, F, Botti, S, Busse, D, Finley, JJ, Bakkers, EPAM & Haverkort, JEM 2020, Towards a Hexagonal SiGe Semiconductor Laser. in 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings., 9192798, Institute of Electrical and Electronics Engineers, 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, California, United States, 10/05/20. <https://ieeexplore.ieee.org/document/9192798>

TY - GEN

T1 - Towards a Hexagonal SiGe Semiconductor Laser

AU - van Tilburg, M. A.J.

AU - Dijkstra, A.

AU - Fadaly, E. M.T.

AU - van Lange, V.T.

AU - Verheijen, M. A.

AU - Suckert, J. R.

AU - Rodl, C.

AU - Furthmuller, J.

AU - Bechstedt, F.

AU - Botti, S.

AU - Busse, D.

AU - Finley, J. J.

AU - Bakkers, E. P.A.M.

AU - Haverkort, J. E.M.

PY - 2020/5

Y1 - 2020/5

N2 - Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.

AB - Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.

UR - http://www.scopus.com/inward/record.url?scp=85091640516&partnerID=8YFLogxK

M3 - Conference contribution

BT - 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers

T2 - 2020 Conference on Lasers and Electro-Optics, CLEO 2020

Y2 - 10 May 2020 through 15 May 2020

ER -

Towards a Hexagonal SiGe Semiconductor Laser

Abstract

Conference

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