Towards a Hexagonal SiGe Semiconductor Laser

M.A.J. van Tilburg, A. Dijkstra, E.M.T. Fadaly, V.T. van Lange, M.A. Verheijen, J.R. Suckert, C. Rodl, J. Furthmuller, F. Bechstedt, S. Botti, D. Busse, J.J. Finley, E.P.A.M. Bakkers, J.E.M. Haverkort

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5μm.

Original languageEnglish
Title of host publication2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)9781943580767
Publication statusPublished - May 2020
Event2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States
Duration: 10 May 202015 May 2020


Conference2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/TerritoryUnited States
CitySan Jose


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