Towards a fully integrated indium-phosphide membrane on silicon photonics platform

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Abstract

In this work we present an integrated platform based on an InP membrane adhesively bonded to a silicon wafer. The platform allows for flexible design of wafer scale active and passive nanophotonic circuits. Advantages of this platform are the flexible fabrication process, large variety of integrated active and passive devices in one photonic layer, high index contrast of devices and therefore small footprint of complex circuits. We demonstrated several building blocks and devices, fabricated in the platform: semiconductor optical amplifiers, lasers and several passive devices, exploiting the high index contrast. Potential of the platform offers the integration of novel high speed devices using regrowth approach.

Original languageEnglish
Title of host publicationNanophotonics and Micro/Nano Optics IV
EditorsZhiping Zhou, Kazumi Wada
Place of PublicationWashington
PublisherSPIE
Number of pages7
ISBN (Electronic)9781510622449
DOIs
Publication statusPublished - 1 Jan 2018
EventNanophotonics and Micro/Nano Optics IV 2018 - Beijing, China
Duration: 12 Oct 201813 Oct 2018

Publication series

NameProceedings of SPIE
Volume10823
ISSN (Print)0277-786X

Conference

ConferenceNanophotonics and Micro/Nano Optics IV 2018
CountryChina
CityBeijing
Period12/10/1813/10/18

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Keywords

  • laser
  • membrane
  • photonic integration

Cite this

Pogoretskiy, V., van Engelen, J. P., van der Tol, J. J. G. M., & Jiao, Y. (2018). Towards a fully integrated indium-phosphide membrane on silicon photonics platform. In Z. Zhou, & K. Wada (Eds.), Nanophotonics and Micro/Nano Optics IV [1082308] (Proceedings of SPIE; Vol. 10823). Washington: SPIE. https://doi.org/10.1117/12.2503544