Towards a fully integrated indium-phosphide membrane on silicon photonics platform

J.P. van Engelen; V. Pogoretskiy; M.K. Smit; J.J.G.M. van der Tol; Y. Jiao

Towards a fully integrated indium-phosphide membrane on silicon photonics platform

J.P. van Engelen, V. Pogoretskiy, M.K. Smit, J.J.G.M. van der Tol, Y. Jiao

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight optical confinement. In this paper a fully integrated membrane photonics platform on silicon is proposed that integrates these active devices with thermally tunable passives and heatsinking capabilities to the silicon carrier.

Original language	English
Title of host publication	Proceedings of the 22nd Annual Symposium of the IEEE Photonics Benelux Chapter, 27-28 November 2017, Delft, The Netherlands
Pages	90-93
Publication status	Published - 27 Nov 2017
Event	22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter - Delft, Netherlands Duration: 27 Nov 2017 → 28 Nov 2017 https://www.aanmelder.nl/ipb2017symposium#.Wi6iLnmDO70

Conference

Conference	22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter
Country/Territory	Netherlands
City	Delft
Period	27/11/17 → 28/11/17
Internet address	https://www.aanmelder.nl/ipb2017symposium#.Wi6iLnmDO70

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@inproceedings{26823d1576324541a6dc00bf1b1bef33,

title = "Towards a fully integrated indium-phosphide membrane on silicon photonics platform",

abstract = "Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight optical confinement. In this paper a fully integrated membrane photonics platform on silicon is proposed that integrates these active devices with thermally tunable passives and heatsinking capabilities to the silicon carrier.",

author = "{van Engelen}, J.P. and V. Pogoretskiy and M.K. Smit and {van der Tol}, J.J.G.M. and Y. Jiao",

year = "2017",

month = nov,

day = "27",

language = "English",

pages = "90--93",

booktitle = "Proceedings of the 22nd Annual Symposium of the IEEE Photonics Benelux Chapter, 27-28 November 2017, Delft, The Netherlands",

note = "22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter ; Conference date: 27-11-2017 Through 28-11-2017",

url = "https://www.aanmelder.nl/ipb2017symposium#.Wi6iLnmDO70",

}

van Engelen, JP , Pogoretskiy, V , Smit, MK , van der Tol, JJGM & Jiao, Y 2017, Towards a fully integrated indium-phosphide membrane on silicon photonics platform. in Proceedings of the 22nd Annual Symposium of the IEEE Photonics Benelux Chapter, 27-28 November 2017, Delft, The Netherlands. pp. 90-93, 22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter, Delft, Netherlands, 27/11/17.

Towards a fully integrated indium-phosphide membrane on silicon photonics platform. / van Engelen, J.P.; Pogoretskiy, V.; Smit, M.K.; van der Tol, J.J.G.M.; Jiao, Y.

Proceedings of the 22nd Annual Symposium of the IEEE Photonics Benelux Chapter, 27-28 November 2017, Delft, The Netherlands. 2017. p. 90-93.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Towards a fully integrated indium-phosphide membrane on silicon photonics platform

AU - van Engelen, J.P.

AU - Pogoretskiy, V.

AU - Smit, M.K.

AU - van der Tol, J.J.G.M.

AU - Jiao, Y.

PY - 2017/11/27

Y1 - 2017/11/27

N2 - Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight optical confinement. In this paper a fully integrated membrane photonics platform on silicon is proposed that integrates these active devices with thermally tunable passives and heatsinking capabilities to the silicon carrier.

AB - Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight optical confinement. In this paper a fully integrated membrane photonics platform on silicon is proposed that integrates these active devices with thermally tunable passives and heatsinking capabilities to the silicon carrier.

M3 - Conference contribution

SP - 90

EP - 93

BT - Proceedings of the 22nd Annual Symposium of the IEEE Photonics Benelux Chapter, 27-28 November 2017, Delft, The Netherlands

T2 - 22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter

Y2 - 27 November 2017 through 28 November 2017

ER -

Towards a fully integrated indium-phosphide membrane on silicon photonics platform

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