Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight optical confinement. In this paper a fully integrated membrane photonics platform on silicon is proposed that integrates these active devices with thermally tunable passives and heatsinking capabilities to the silicon carrier.
|Title of host publication||Proceedings of the 22nd Annual Symposium of the IEEE Photonics Benelux Chapter, 27-28 November 2017, Delft, The Netherlands|
|Publication status||Published - 27 Nov 2017|
|Event||22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter - Delft, Netherlands|
Duration: 27 Nov 2017 → 28 Nov 2017
|Conference||22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter|
|Period||27/11/17 → 28/11/17|
van Engelen, J. P., Pogoretskiy, V., Smit, M. K., van der Tol, J. J. G. M., & Jiao, Y. (2017). Towards a fully integrated indium-phosphide membrane on silicon photonics platform. In Proceedings of the 22nd Annual Symposium of the IEEE Photonics Benelux Chapter, 27-28 November 2017, Delft, The Netherlands (pp. 90-93)