Towards a fully integrated indium-phosphide membrane on silicon photonics platform

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Abstract

Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight optical confinement. In this paper a fully integrated membrane photonics platform on silicon is proposed that integrates these active devices with thermally tunable passives and heatsinking capabilities to the silicon carrier.
Original languageEnglish
Title of host publicationProceedings of the 22nd Annual Symposium of the IEEE Photonics Benelux Chapter, 27-28 November 2017, Delft, The Netherlands
Pages90-93
Publication statusPublished - 27 Nov 2017
Event22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter - Delft, Netherlands
Duration: 27 Nov 201728 Nov 2017
https://www.aanmelder.nl/ipb2017symposium#.Wi6iLnmDO70

Conference

Conference22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter
CountryNetherlands
CityDelft
Period27/11/1728/11/17
Internet address

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Cite this

van Engelen, J. P., Pogoretskiy, V., Smit, M. K., van der Tol, J. J. G. M., & Jiao, Y. (2017). Towards a fully integrated indium-phosphide membrane on silicon photonics platform. In Proceedings of the 22nd Annual Symposium of the IEEE Photonics Benelux Chapter, 27-28 November 2017, Delft, The Netherlands (pp. 90-93)