Abstract
Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight optical confinement. In this paper a fully integrated membrane photonics platform on silicon is proposed that integrates these active devices with thermally tunable passives and heatsinking capabilities to the silicon carrier.
| Original language | English |
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| Title of host publication | Proceedings of the 22nd Annual Symposium of the IEEE Photonics Benelux Chapter, 27-28 November 2017, Delft, The Netherlands |
| Pages | 90-93 |
| Publication status | Published - 27 Nov 2017 |
| Event | 22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter - Delft, Netherlands Duration: 27 Nov 2017 → 28 Nov 2017 https://www.aanmelder.nl/ipb2017symposium#.Wi6iLnmDO70 |
Conference
| Conference | 22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter |
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| Country | Netherlands |
| City | Delft |
| Period | 27/11/17 → 28/11/17 |
| Internet address |
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Cite this
van Engelen, J. P., Pogoretskiy, V., Smit, M. K., van der Tol, J. J. G. M., & Jiao, Y. (2017). Towards a fully integrated indium-phosphide membrane on silicon photonics platform. In Proceedings of the 22nd Annual Symposium of the IEEE Photonics Benelux Chapter, 27-28 November 2017, Delft, The Netherlands (pp. 90-93)