Abstract
We have studied the growth process of the topological insulator (TI) Sb2Te3Sb2Te3 on Si(111) by scanning tunneling microscopy. High quality thin films from more than 22 nm down to 1 nm in thickness have been deposited by molecular beam epitaxy. To determine the thickness and domain formation of the films, x-ray reflectivity and x-ray diffraction were utilized. In comparison to previous studies of the TI Bi2Te3Bi2Te3, the growth mechanism of Sb2Te3Sb2Te3 shows a similar transition from nucleation and growth in Sb–Te and Te–Te bilayers, respectively, to mound formation for thicker films. Atom probe tomography measurements reveal a intermixed interface between Sb2Te3Sb2Te3 and Si(111) substrate. These findings can explain the high density of defects and domains.
Original language | English |
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Pages (from-to) | 158-162 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 453 |
Issue number | November 2016 |
DOIs | |
Publication status | Published - 1 Nov 2016 |