Top-split-gate ambipolar organic thin-film transistors

Hocheon Yoo, Seon Baek Lee, Dong Kyu Lee, Edsger C.P. Smits, Gerwin H. Gelinck, Kilwon Cho, Jae Joon Kim

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

Split-gate ambipolar organic transistor technology is gaining interests as a practical solution for the implementation of complementary transistors. It is known that conventional ambipolar transistors suffer from poor DC gain, noise margin, and high power consumption, as they do not have a well-defined off-state region. A split-gate device structure enables ambipolar transistors operating in a controlled unipolar mode (both p-type and n-type), resulting in superior inverter characteristics. A key challenge in previously reported split-gate ambipolar organic thin-film transistors is the strong current-voltage instabilities due to charge trapping at the dielectric interface. Here, the first split-gate ambipolar organic transistors with top-gate/bottom-contact structure are demonstrated. Compared to the previous split-gate devices, the top-split-gate ambipolar organic transistor exhibits superior electrical properties. The proposed device shows hysteresis-free I-V characteristics as well as higher bias stress stability. Furthermore, the complementary inverter circuit using the proposed transistors is also demonstrated, which results in a higher output swing and DC gain compared to the baseline ambipolar inverter.

Original languageEnglish
Article number1700536
JournalAdvanced Electronic Materials
Volume4
Issue number5
DOIs
Publication statusPublished - 1 May 2018

Fingerprint

Thin film transistors
Transistors
Gates (transistor)
Charge trapping
Hysteresis
Electric properties
Electric power utilization
Networks (circuits)
Electric potential

Keywords

  • Ambipolar organic transistors
  • Ambipolar semiconductors
  • Complementary electronics
  • Multigate devices

Cite this

Yoo, H., Lee, S. B., Lee, D. K., Smits, E. C. P., Gelinck, G. H., Cho, K., & Kim, J. J. (2018). Top-split-gate ambipolar organic thin-film transistors. Advanced Electronic Materials, 4(5), [1700536]. https://doi.org/10.1002/aelm.201700536
Yoo, Hocheon ; Lee, Seon Baek ; Lee, Dong Kyu ; Smits, Edsger C.P. ; Gelinck, Gerwin H. ; Cho, Kilwon ; Kim, Jae Joon. / Top-split-gate ambipolar organic thin-film transistors. In: Advanced Electronic Materials. 2018 ; Vol. 4, No. 5.
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Yoo, H, Lee, SB, Lee, DK, Smits, ECP, Gelinck, GH, Cho, K & Kim, JJ 2018, 'Top-split-gate ambipolar organic thin-film transistors', Advanced Electronic Materials, vol. 4, no. 5, 1700536. https://doi.org/10.1002/aelm.201700536

Top-split-gate ambipolar organic thin-film transistors. / Yoo, Hocheon; Lee, Seon Baek; Lee, Dong Kyu; Smits, Edsger C.P.; Gelinck, Gerwin H.; Cho, Kilwon; Kim, Jae Joon.

In: Advanced Electronic Materials, Vol. 4, No. 5, 1700536, 01.05.2018.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Cho, Kilwon

AU - Kim, Jae Joon

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