TiO2 thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

Morteza Aghaee, J. Verheijen, A.A.E. Stevens, Erwin Kessels, Adriana Creatore (Corresponding author)

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Abstract

A microplasma printer is employed to deposit thin film patterns of TiO 2 by titanium tetra-isopropoxide and N 2/O 2 plasma at atmospheric pressure. The setup is adopted to carry out deposition in two configurations, namely under chemical vapor deposition (CVD) and atomic layer deposition (ALD) modes. The properties of TiO 2, as well as the patterning resolution, are investigated. The amorphous TiO 2 deposited in the CVD mode contains a relatively high level of impurities (residual carbon content of 5–10 at.%) and is characterized by a low refractive index of 1.8. With the ALD mode on the other hand, TiO 2 is obtained with a low level of impurities (<1 at.% C and <2 at.% N), a refractive index of 1.98, and a growth per cycle of 0.15 nm. Furthermore, the spatial resolution for a 8-nm-thick film is determined by X-ray photoelectron spectroscopy line scan and found to be equal to 2,000 and 900 µm for the CVD and ALD modes, respectively. This study can be regarded as the first step toward area-selective CVD and ALD of TiO 2 by a microplasma printer, which can be further explored and extended to other material systems.

Original languageEnglish
Article number1900127
Number of pages14
JournalPlasma Processes and Polymers
Volume16
Issue number12
DOIs
Publication statusPublished - Dec 2019

Fingerprint

microplasmas
printers
Atomic layer deposition
atomic layer epitaxy
Atmospheric pressure
Chemical vapor deposition
atmospheric pressure
vapor deposition
Thin films
thin films
Refractive index
Impurities
refractivity
impurities
Titanium
Thick films
thick films
Carbon
Deposits
X ray photoelectron spectroscopy

Keywords

  • plasma printing
  • plasma-assisted atomic layer deposition
  • titanium dioxide

Cite this

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title = "TiO2 thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer",
abstract = "A microplasma printer is employed to deposit thin film patterns of TiO 2 by titanium tetra-isopropoxide and N 2/O 2 plasma at atmospheric pressure. The setup is adopted to carry out deposition in two configurations, namely under chemical vapor deposition (CVD) and atomic layer deposition (ALD) modes. The properties of TiO 2, as well as the patterning resolution, are investigated. The amorphous TiO 2 deposited in the CVD mode contains a relatively high level of impurities (residual carbon content of 5–10 at.{\%}) and is characterized by a low refractive index of 1.8. With the ALD mode on the other hand, TiO 2 is obtained with a low level of impurities (<1 at.{\%} C and <2 at.{\%} N), a refractive index of 1.98, and a growth per cycle of 0.15 nm. Furthermore, the spatial resolution for a 8-nm-thick film is determined by X-ray photoelectron spectroscopy line scan and found to be equal to 2,000 and 900 µm for the CVD and ALD modes, respectively. This study can be regarded as the first step toward area-selective CVD and ALD of TiO 2 by a microplasma printer, which can be further explored and extended to other material systems.",
keywords = "plasma printing, plasma-assisted atomic layer deposition, titanium dioxide",
author = "Morteza Aghaee and J. Verheijen and A.A.E. Stevens and Erwin Kessels and Adriana Creatore",
year = "2019",
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TY - JOUR

T1 - TiO2 thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

AU - Aghaee, Morteza

AU - Verheijen, J.

AU - Stevens, A.A.E.

AU - Kessels, Erwin

AU - Creatore, Adriana

PY - 2019/12

Y1 - 2019/12

N2 - A microplasma printer is employed to deposit thin film patterns of TiO 2 by titanium tetra-isopropoxide and N 2/O 2 plasma at atmospheric pressure. The setup is adopted to carry out deposition in two configurations, namely under chemical vapor deposition (CVD) and atomic layer deposition (ALD) modes. The properties of TiO 2, as well as the patterning resolution, are investigated. The amorphous TiO 2 deposited in the CVD mode contains a relatively high level of impurities (residual carbon content of 5–10 at.%) and is characterized by a low refractive index of 1.8. With the ALD mode on the other hand, TiO 2 is obtained with a low level of impurities (<1 at.% C and <2 at.% N), a refractive index of 1.98, and a growth per cycle of 0.15 nm. Furthermore, the spatial resolution for a 8-nm-thick film is determined by X-ray photoelectron spectroscopy line scan and found to be equal to 2,000 and 900 µm for the CVD and ALD modes, respectively. This study can be regarded as the first step toward area-selective CVD and ALD of TiO 2 by a microplasma printer, which can be further explored and extended to other material systems.

AB - A microplasma printer is employed to deposit thin film patterns of TiO 2 by titanium tetra-isopropoxide and N 2/O 2 plasma at atmospheric pressure. The setup is adopted to carry out deposition in two configurations, namely under chemical vapor deposition (CVD) and atomic layer deposition (ALD) modes. The properties of TiO 2, as well as the patterning resolution, are investigated. The amorphous TiO 2 deposited in the CVD mode contains a relatively high level of impurities (residual carbon content of 5–10 at.%) and is characterized by a low refractive index of 1.8. With the ALD mode on the other hand, TiO 2 is obtained with a low level of impurities (<1 at.% C and <2 at.% N), a refractive index of 1.98, and a growth per cycle of 0.15 nm. Furthermore, the spatial resolution for a 8-nm-thick film is determined by X-ray photoelectron spectroscopy line scan and found to be equal to 2,000 and 900 µm for the CVD and ALD modes, respectively. This study can be regarded as the first step toward area-selective CVD and ALD of TiO 2 by a microplasma printer, which can be further explored and extended to other material systems.

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