Time-resolved terahertz time-domain near-field microscopy

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Abstract

We demonstrate a novel method for measuring terahertz (THz) photoconductivity of semiconductors on length scales smaller than the diffraction limit at THz frequencies. This method is based on a near-field microscope that measures the transmission of a THz pulse through the semiconductor following photoexcitation by an ultrafast laser pulse. Combining back-excitation of the sample using a Dove prism, and a dual lock-in detection scheme, our microscope design offers a flexible platform for near-field time-resolved THz time-domain spectroscopy, using fluences available to typical laser oscillators. Experimental results on a thin film of gallium arsenide grown by metal organic chemical vapor deposition are presented as a proof-of-concept, demonstrating the ability to map the complex conductivity as well as sub-ps dynamics of photoexcited carriers with a resolution of λ/10 at 0.5 THz.

Original languageEnglish
Pages (from-to)32118-32129
Number of pages12
JournalOptics Express
Volume26
Issue number24
DOIs
Publication statusPublished - 26 Nov 2018

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near fields
microscopes
microscopy
pulses
photoexcitation
photoconductivity
prisms
gallium
lasers
metalorganic chemical vapor deposition
fluence
platforms
oscillators
conductivity
thin films
diffraction
spectroscopy
excitation

Cite this

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title = "Time-resolved terahertz time-domain near-field microscopy",
abstract = "We demonstrate a novel method for measuring terahertz (THz) photoconductivity of semiconductors on length scales smaller than the diffraction limit at THz frequencies. This method is based on a near-field microscope that measures the transmission of a THz pulse through the semiconductor following photoexcitation by an ultrafast laser pulse. Combining back-excitation of the sample using a Dove prism, and a dual lock-in detection scheme, our microscope design offers a flexible platform for near-field time-resolved THz time-domain spectroscopy, using fluences available to typical laser oscillators. Experimental results on a thin film of gallium arsenide grown by metal organic chemical vapor deposition are presented as a proof-of-concept, demonstrating the ability to map the complex conductivity as well as sub-ps dynamics of photoexcited carriers with a resolution of λ/10 at 0.5 THz.",
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Time-resolved terahertz time-domain near-field microscopy. / van Hoof, N J.J.; ter Huurne, S.E.T.; Rivas, J. Gómez; Halpin, A.

In: Optics Express, Vol. 26, No. 24, 26.11.2018, p. 32118-32129.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - van Hoof, N J.J.

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AU - Halpin, A.

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AB - We demonstrate a novel method for measuring terahertz (THz) photoconductivity of semiconductors on length scales smaller than the diffraction limit at THz frequencies. This method is based on a near-field microscope that measures the transmission of a THz pulse through the semiconductor following photoexcitation by an ultrafast laser pulse. Combining back-excitation of the sample using a Dove prism, and a dual lock-in detection scheme, our microscope design offers a flexible platform for near-field time-resolved THz time-domain spectroscopy, using fluences available to typical laser oscillators. Experimental results on a thin film of gallium arsenide grown by metal organic chemical vapor deposition are presented as a proof-of-concept, demonstrating the ability to map the complex conductivity as well as sub-ps dynamics of photoexcited carriers with a resolution of λ/10 at 0.5 THz.

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