Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 µm

A. Fiore; P. Borri; W. Langbein; J.M. Hvam; U. Oesterle; R. Houdré; R.P. Stanley; M. Ilegems

doi:10.1063/1.126668

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 µm

A. Fiore, P. Borri, W. Langbein, J.M. Hvam, U. Oesterle, R. Houdré, R.P. Stanley, M. Ilegems

Photonics and Semiconductor Nanophysics

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Abstract

We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 µm at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10±2 ps is measured, indicating a fast capture and relaxation of carriers inside the dots. ©2000 American Institute of Physics.

Original language	English
Pages (from-to)	3430-3432
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	23
DOIs	https://doi.org/10.1063/1.126668
Publication status	Published - 2000

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title = "Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 µm",

abstract = "We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 µm at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10±2 ps is measured, indicating a fast capture and relaxation of carriers inside the dots. {\textcopyright}2000 American Institute of Physics.",

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doi = "10.1063/1.126668",

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AU - Fiore, A.

AU - Borri, P.

AU - Langbein, W.

AU - Hvam, J.M.

AU - Oesterle, U.

AU - Houdré, R.

AU - Stanley, R.P.

AU - Ilegems, M.

PY - 2000

Y1 - 2000

N2 - We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 µm at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10±2 ps is measured, indicating a fast capture and relaxation of carriers inside the dots. ©2000 American Institute of Physics.

AB - We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 µm at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10±2 ps is measured, indicating a fast capture and relaxation of carriers inside the dots. ©2000 American Institute of Physics.

U2 - 10.1063/1.126668

DO - 10.1063/1.126668

M3 - Article

SN - 0003-6951

VL - 76

SP - 3430

EP - 3432

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 µm

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