Time-resolved cavity ring-down spectroscopic study of the gas phase and surface loss rates of Si and SiH3 plasma radicals

J.P.M. Hoefnagels; A.A.E. Stevens; M.G.H. Boogaarts; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1016/S0009-2614(02)00802-3

Time-resolved cavity ring-down spectroscopic study of the gas phase and surface loss rates of Si and SiH3 plasma radicals

J.P.M. Hoefnagels, A.A.E. Stevens, M.G.H. Boogaarts, W.M.M. Kessels, M.C.M. Sanden, van de

Research output: Contribution to journal › Article › Academic › peer-review

35 Citations (Scopus)

3 Downloads (Pure)

Abstract

Time-resolved cavity ring-down spectroscopy (CRDS) has been applied to determine gas phase and surface loss rates of Si and SiH3 radicals during plasma deposition of hydrogenated amorphous silicon. This has been done by monitoring the temporal decay of the radicals densities as initiated by a minor periodic modulation applied to a remote SiH4 plasma. From pressure dependence, it is shown that Si is reactive with SiH4 [(1.4±0.6)×10-16 m-3 s-1 reaction rate constant], while SiH3 is unreactive in the gas phase. A surface reaction probability ß of 0.9

Original language	English
Pages (from-to)	189-193
Journal	Chemical Physics Letters
Volume	360
Issue number	1-2
DOIs	https://doi.org/10.1016/S0009-2614(02)00802-3
Publication status	Published - 2002

Access to Document

10.1016/S0009-2614(02)00802-3

Cite this

@article{9151b56750e844a7a4e0285c2a7c4bd4,

title = "Time-resolved cavity ring-down spectroscopic study of the gas phase and surface loss rates of Si and SiH3 plasma radicals",

abstract = "Time-resolved cavity ring-down spectroscopy (CRDS) has been applied to determine gas phase and surface loss rates of Si and SiH3 radicals during plasma deposition of hydrogenated amorphous silicon. This has been done by monitoring the temporal decay of the radicals densities as initiated by a minor periodic modulation applied to a remote SiH4 plasma. From pressure dependence, it is shown that Si is reactive with SiH4 [(1.4±0.6)×10-16 m-3 s-1 reaction rate constant], while SiH3 is unreactive in the gas phase. A surface reaction probability {\ss} of 0.9",

author = "J.P.M. Hoefnagels and A.A.E. Stevens and M.G.H. Boogaarts and W.M.M. Kessels and {Sanden, van de}, M.C.M.",

year = "2002",

doi = "10.1016/S0009-2614(02)00802-3",

language = "English",

volume = "360",

pages = "189--193",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Time-resolved cavity ring-down spectroscopic study of the gas phase and surface loss rates of Si and SiH3 plasma radicals

AU - Hoefnagels, J.P.M.

AU - Stevens, A.A.E.

AU - Boogaarts, M.G.H.

AU - Kessels, W.M.M.

AU - Sanden, van de, M.C.M.

PY - 2002

Y1 - 2002

N2 - Time-resolved cavity ring-down spectroscopy (CRDS) has been applied to determine gas phase and surface loss rates of Si and SiH3 radicals during plasma deposition of hydrogenated amorphous silicon. This has been done by monitoring the temporal decay of the radicals densities as initiated by a minor periodic modulation applied to a remote SiH4 plasma. From pressure dependence, it is shown that Si is reactive with SiH4 [(1.4±0.6)×10-16 m-3 s-1 reaction rate constant], while SiH3 is unreactive in the gas phase. A surface reaction probability ß of 0.9

AB - Time-resolved cavity ring-down spectroscopy (CRDS) has been applied to determine gas phase and surface loss rates of Si and SiH3 radicals during plasma deposition of hydrogenated amorphous silicon. This has been done by monitoring the temporal decay of the radicals densities as initiated by a minor periodic modulation applied to a remote SiH4 plasma. From pressure dependence, it is shown that Si is reactive with SiH4 [(1.4±0.6)×10-16 m-3 s-1 reaction rate constant], while SiH3 is unreactive in the gas phase. A surface reaction probability ß of 0.9

U2 - 10.1016/S0009-2614(02)00802-3

DO - 10.1016/S0009-2614(02)00802-3

M3 - Article

SN - 0009-2614

VL - 360

SP - 189

EP - 193

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-2

ER -

Time-resolved cavity ring-down spectroscopic study of the gas phase and surface loss rates of Si and SiH3 plasma radicals

Abstract

Access to Document

Fingerprint

Cite this