Time-of-flight experiments on 2D electron gases

E.A.E. Zwaal; W.T. Gorissen; J.E.M. Haverkort; P.J. Hall, van; J.H. Wolter

doi:10.1016/0038-1101(89)90198-6

Time-of-flight experiments on 2D electron gases

E.A.E. Zwaal, W.T. Gorissen, J.E.M. Haverkort, P.J. Hall, van, J.H. Wolter

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Transport of electrons in GaAs/AlGaAs modulation-doped heterostructures is studied by means of the Time-of-Flight technique. By applying a constant background illumination, we are able to distinguish between lateral transport processes and effects of perpendicular transport across the GaAs/AlGaAs interface. It is shown that the initial part of the photocurrent signal is due to lateral transport only. This part of the signal is further investigated as a function of sample length and applied electric field.

Original language	English
Pages (from-to)	1109-1112
Journal	Solid-State Electronics
Volume	32
Issue number	12
DOIs	https://doi.org/10.1016/0038-1101(89)90198-6
Publication status	Published - 1989

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title = "Time-of-flight experiments on 2D electron gases",

abstract = "Transport of electrons in GaAs/AlGaAs modulation-doped heterostructures is studied by means of the Time-of-Flight technique. By applying a constant background illumination, we are able to distinguish between lateral transport processes and effects of perpendicular transport across the GaAs/AlGaAs interface. It is shown that the initial part of the photocurrent signal is due to lateral transport only. This part of the signal is further investigated as a function of sample length and applied electric field.",

author = "E.A.E. Zwaal and W.T. Gorissen and J.E.M. Haverkort and {Hall, van}, P.J. and J.H. Wolter",

year = "1989",

doi = "10.1016/0038-1101(89)90198-6",

language = "English",

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pages = "1109--1112",

journal = "Solid-State Electronics",

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T1 - Time-of-flight experiments on 2D electron gases

AU - Zwaal, E.A.E.

AU - Gorissen, W.T.

AU - Haverkort, J.E.M.

AU - Hall, van, P.J.

AU - Wolter, J.H.

PY - 1989

Y1 - 1989

N2 - Transport of electrons in GaAs/AlGaAs modulation-doped heterostructures is studied by means of the Time-of-Flight technique. By applying a constant background illumination, we are able to distinguish between lateral transport processes and effects of perpendicular transport across the GaAs/AlGaAs interface. It is shown that the initial part of the photocurrent signal is due to lateral transport only. This part of the signal is further investigated as a function of sample length and applied electric field.

AB - Transport of electrons in GaAs/AlGaAs modulation-doped heterostructures is studied by means of the Time-of-Flight technique. By applying a constant background illumination, we are able to distinguish between lateral transport processes and effects of perpendicular transport across the GaAs/AlGaAs interface. It is shown that the initial part of the photocurrent signal is due to lateral transport only. This part of the signal is further investigated as a function of sample length and applied electric field.

U2 - 10.1016/0038-1101(89)90198-6

DO - 10.1016/0038-1101(89)90198-6

M3 - Article

SN - 0038-1101

VL - 32

SP - 1109

EP - 1112

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

Time-of-flight experiments on 2D electron gases

Abstract

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