Time-of-flight experiments on 2D electron gases

E.A.E. Zwaal, W.T. Gorissen, J.E.M. Haverkort, P.J. Hall, van, J.H. Wolter

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Abstract

Transport of electrons in GaAs/AlGaAs modulation-doped heterostructures is studied by means of the Time-of-Flight technique. By applying a constant background illumination, we are able to distinguish between lateral transport processes and effects of perpendicular transport across the GaAs/AlGaAs interface. It is shown that the initial part of the photocurrent signal is due to lateral transport only. This part of the signal is further investigated as a function of sample length and applied electric field.
Original languageEnglish
Pages (from-to)1109-1112
JournalSolid-State Electronics
Volume32
Issue number12
DOIs
Publication statusPublished - 1989

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    Zwaal, E. A. E., Gorissen, W. T., Haverkort, J. E. M., Hall, van, P. J., & Wolter, J. H. (1989). Time-of-flight experiments on 2D electron gases. Solid-State Electronics, 32(12), 1109-1112. https://doi.org/10.1016/0038-1101(89)90198-6