Time-of-flight experiments on 2D electron gases

E.A.E. Zwaal, W.T. Gorissen, J.E.M. Haverkort, P.J. Hall, van, J.H. Wolter

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Abstract

Transport of electrons in GaAs/AlGaAs modulation-doped heterostructures is studied by means of the Time-of-Flight technique. By applying a constant background illumination, we are able to distinguish between lateral transport processes and effects of perpendicular transport across the GaAs/AlGaAs interface. It is shown that the initial part of the photocurrent signal is due to lateral transport only. This part of the signal is further investigated as a function of sample length and applied electric field.
Original languageEnglish
Pages (from-to)1109-1112
JournalSolid-State Electronics
Volume32
Issue number12
DOIs
Publication statusPublished - 1989

Fingerprint

Electron gas
Photocurrents
aluminum gallium arsenides
electron gas
Heterojunctions
Lighting
Electric fields
Modulation
Electrons
photocurrents
Experiments
illumination
modulation
electric fields
electrons
gallium arsenide

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Zwaal, E. A. E., Gorissen, W. T., Haverkort, J. E. M., Hall, van, P. J., & Wolter, J. H. (1989). Time-of-flight experiments on 2D electron gases. Solid-State Electronics, 32(12), 1109-1112. https://doi.org/10.1016/0038-1101(89)90198-6
Zwaal, E.A.E. ; Gorissen, W.T. ; Haverkort, J.E.M. ; Hall, van, P.J. ; Wolter, J.H. / Time-of-flight experiments on 2D electron gases. In: Solid-State Electronics. 1989 ; Vol. 32, No. 12. pp. 1109-1112.
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Zwaal, EAE, Gorissen, WT, Haverkort, JEM, Hall, van, PJ & Wolter, JH 1989, 'Time-of-flight experiments on 2D electron gases', Solid-State Electronics, vol. 32, no. 12, pp. 1109-1112. https://doi.org/10.1016/0038-1101(89)90198-6

Time-of-flight experiments on 2D electron gases. / Zwaal, E.A.E.; Gorissen, W.T.; Haverkort, J.E.M.; Hall, van, P.J.; Wolter, J.H.

In: Solid-State Electronics, Vol. 32, No. 12, 1989, p. 1109-1112.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Time-of-flight experiments on 2D electron gases

AU - Zwaal, E.A.E.

AU - Gorissen, W.T.

AU - Haverkort, J.E.M.

AU - Hall, van, P.J.

AU - Wolter, J.H.

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AB - Transport of electrons in GaAs/AlGaAs modulation-doped heterostructures is studied by means of the Time-of-Flight technique. By applying a constant background illumination, we are able to distinguish between lateral transport processes and effects of perpendicular transport across the GaAs/AlGaAs interface. It is shown that the initial part of the photocurrent signal is due to lateral transport only. This part of the signal is further investigated as a function of sample length and applied electric field.

U2 - 10.1016/0038-1101(89)90198-6

DO - 10.1016/0038-1101(89)90198-6

M3 - Article

VL - 32

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EP - 1112

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 12

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