Time dependency hot carrier degradation in LDMOSFETs

Among the large variety of semiconductor devices addressed to power applications, laterally diffused MOS (LDMOS) transistors have been widely used as power switches. Nevertheless, LDMOS devices usually work under high voltage and high power conditions; consequently, they suffer considerably from the hot-carrier effects (HCE), and hot-carrier degradation of LDMOS devices has become an important reliability issue in power integrated circuits. In order to improve the understanding of the physical mechanism resulting in hot-carrier degradation and make prediction on the device level degradation over time we conduct TCAD Medici simulation introducing carrier injection in a form of fixed interface states.