Tilting catalyst-free InAs nanowires by 3D-twinning and unusual growth directions

Heidi Potts, Youri van Hees, Gözde Tütüncüoglu, Martin Friedl, Jean Baptiste Leran, Anna FontcubertaMorral

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on (111)B GaAs. The tilted direction is predominantly the result of a three-dimensional twinning phenomenon at the initial stages of growth, so far only observed in VLS growth. We also find some nanowires growing in '112' and other directions. We further demonstrate how the tilting of nanowires can be engineered by modifying the growth conditions, and outline the procedures to achieve fully vertical or tilted nanowire ensembles. Conditions leading to a high density of tilted nanowires also provide a way to grow nanoscale crosses. This work opens the path toward achieving control over nanowire structures and related hierarchical structures.

Original languageEnglish
Pages (from-to)3596-3605
Number of pages10
JournalCrystal Growth and Design
Volume17
Issue number7
DOIs
Publication statusPublished - 5 Jul 2017

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Twinning
twinning
Nanowires
nanowires
catalysts
Catalysts
Direction compound
indium arsenide

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Potts, H., van Hees, Y., Tütüncüoglu, G., Friedl, M., Leran, J. B., & FontcubertaMorral, A. (2017). Tilting catalyst-free InAs nanowires by 3D-twinning and unusual growth directions. Crystal Growth and Design, 17(7), 3596-3605. https://doi.org/10.1021/acs.cgd.7b00487
Potts, Heidi ; van Hees, Youri ; Tütüncüoglu, Gözde ; Friedl, Martin ; Leran, Jean Baptiste ; FontcubertaMorral, Anna. / Tilting catalyst-free InAs nanowires by 3D-twinning and unusual growth directions. In: Crystal Growth and Design. 2017 ; Vol. 17, No. 7. pp. 3596-3605.
@article{b3ad663c032943a98a789b386a1532a7,
title = "Tilting catalyst-free InAs nanowires by 3D-twinning and unusual growth directions",
abstract = "Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on (111)B GaAs. The tilted direction is predominantly the result of a three-dimensional twinning phenomenon at the initial stages of growth, so far only observed in VLS growth. We also find some nanowires growing in '112' and other directions. We further demonstrate how the tilting of nanowires can be engineered by modifying the growth conditions, and outline the procedures to achieve fully vertical or tilted nanowire ensembles. Conditions leading to a high density of tilted nanowires also provide a way to grow nanoscale crosses. This work opens the path toward achieving control over nanowire structures and related hierarchical structures.",
author = "Heidi Potts and {van Hees}, Youri and G{\"o}zde T{\"u}t{\"u}nc{\"u}oglu and Martin Friedl and Leran, {Jean Baptiste} and Anna FontcubertaMorral",
year = "2017",
month = "7",
day = "5",
doi = "10.1021/acs.cgd.7b00487",
language = "English",
volume = "17",
pages = "3596--3605",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "7",

}

Potts, H, van Hees, Y, Tütüncüoglu, G, Friedl, M, Leran, JB & FontcubertaMorral, A 2017, 'Tilting catalyst-free InAs nanowires by 3D-twinning and unusual growth directions', Crystal Growth and Design, vol. 17, no. 7, pp. 3596-3605. https://doi.org/10.1021/acs.cgd.7b00487

Tilting catalyst-free InAs nanowires by 3D-twinning and unusual growth directions. / Potts, Heidi; van Hees, Youri; Tütüncüoglu, Gözde; Friedl, Martin; Leran, Jean Baptiste; FontcubertaMorral, Anna.

In: Crystal Growth and Design, Vol. 17, No. 7, 05.07.2017, p. 3596-3605.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Tilting catalyst-free InAs nanowires by 3D-twinning and unusual growth directions

AU - Potts, Heidi

AU - van Hees, Youri

AU - Tütüncüoglu, Gözde

AU - Friedl, Martin

AU - Leran, Jean Baptiste

AU - FontcubertaMorral, Anna

PY - 2017/7/5

Y1 - 2017/7/5

N2 - Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on (111)B GaAs. The tilted direction is predominantly the result of a three-dimensional twinning phenomenon at the initial stages of growth, so far only observed in VLS growth. We also find some nanowires growing in '112' and other directions. We further demonstrate how the tilting of nanowires can be engineered by modifying the growth conditions, and outline the procedures to achieve fully vertical or tilted nanowire ensembles. Conditions leading to a high density of tilted nanowires also provide a way to grow nanoscale crosses. This work opens the path toward achieving control over nanowire structures and related hierarchical structures.

AB - Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on (111)B GaAs. The tilted direction is predominantly the result of a three-dimensional twinning phenomenon at the initial stages of growth, so far only observed in VLS growth. We also find some nanowires growing in '112' and other directions. We further demonstrate how the tilting of nanowires can be engineered by modifying the growth conditions, and outline the procedures to achieve fully vertical or tilted nanowire ensembles. Conditions leading to a high density of tilted nanowires also provide a way to grow nanoscale crosses. This work opens the path toward achieving control over nanowire structures and related hierarchical structures.

UR - http://www.scopus.com/inward/record.url?scp=85021891061&partnerID=8YFLogxK

U2 - 10.1021/acs.cgd.7b00487

DO - 10.1021/acs.cgd.7b00487

M3 - Article

AN - SCOPUS:85021891061

VL - 17

SP - 3596

EP - 3605

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 7

ER -