Three terminal double barrier resonant tunneling devices with the base contact to the quantum well

M.I. Lepsa; T.G. Roer, van de; J.J.M. Kwaspen; E. Smalbrugge; W.C. Vleuten, van der; L.M.F. Kaufmann

Three terminal double barrier resonant tunneling devices with the base contact to the quantum well

M.I. Lepsa, T.G. Roer, van de, J.J.M. Kwaspen, E. Smalbrugge, W.C. Vleuten, van der, L.M.F. Kaufmann

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Proc. 1997 International Semiconductor Conference, CAS '97
Pages	139-142
Publication status	Published - 1997
Event	conference; Proc. 1997 International Semiconductor Conference, CAS '97, Sinaia, Romania, 8-11 October 1997 - Duration: 1 Jan 1997 → …

Conference

Conference	conference; Proc. 1997 International Semiconductor Conference, CAS '97, Sinaia, Romania, 8-11 October 1997
Period	1/01/97 → …
Other	Proc. 1997 International Semiconductor Conference, CAS '97, Sinaia, Romania, 8-11 October 1997

Cite this

@inproceedings{07ceb634770c442f81558f97e2b83580,

title = "Three terminal double barrier resonant tunneling devices with the base contact to the quantum well",

author = "M.I. Lepsa and \{Roer, van de\}, T.G. and J.J.M. Kwaspen and E. Smalbrugge and \{Vleuten, van der\}, W.C. and L.M.F. Kaufmann",

year = "1997",

language = "English",

isbn = "0-7803-3804-9",

pages = "139--142",

booktitle = "Proc. 1997 International Semiconductor Conference, CAS '97",

note = "conference; Proc. 1997 International Semiconductor Conference, CAS \'97, Sinaia, Romania, 8-11 October 1997 ; Conference date: 01-01-1997",

}

Lepsa, MI, Roer, van de, TG, Kwaspen, JJM, Smalbrugge, E, Vleuten, van der, WC & Kaufmann, LMF 1997, Three terminal double barrier resonant tunneling devices with the base contact to the quantum well. in Proc. 1997 International Semiconductor Conference, CAS '97. pp. 139-142, conference; Proc. 1997 International Semiconductor Conference, CAS '97, Sinaia, Romania, 8-11 October 1997, 1/01/97.

TY - GEN

T1 - Three terminal double barrier resonant tunneling devices with the base contact to the quantum well

AU - Lepsa, M.I.

AU - Roer, van de, T.G.

AU - Kwaspen, J.J.M.

AU - Smalbrugge, E.

AU - Vleuten, van der, W.C.

AU - Kaufmann, L.M.F.

PY - 1997

Y1 - 1997

M3 - Conference contribution

SN - 0-7803-3804-9

SP - 139

EP - 142

BT - Proc. 1997 International Semiconductor Conference, CAS '97

T2 - conference; Proc. 1997 International Semiconductor Conference, CAS '97, Sinaia, Romania, 8-11 October 1997

Y2 - 1 January 1997

ER -