Three terminal double barrier resonant tunneling devices with the base contact to the quantum well

M.I. Lepsa, T.G. Roer, van de, J.J.M. Kwaspen, E. Smalbrugge, W.C. Vleuten, van der, L.M.F. Kaufmann

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)
Original languageEnglish
Title of host publicationProc. 1997 International Semiconductor Conference, CAS '97
Pages139-142
Publication statusPublished - 1997
Eventconference; Proc. 1997 International Semiconductor Conference, CAS '97, Sinaia, Romania, 8-11 October 1997 -
Duration: 1 Jan 1997 → …

Conference

Conferenceconference; Proc. 1997 International Semiconductor Conference, CAS '97, Sinaia, Romania, 8-11 October 1997
Period1/01/97 → …
OtherProc. 1997 International Semiconductor Conference, CAS '97, Sinaia, Romania, 8-11 October 1997

Cite this

Lepsa, M. I., Roer, van de, T. G., Kwaspen, J. J. M., Smalbrugge, E., Vleuten, van der, W. C., & Kaufmann, L. M. F. (1997). Three terminal double barrier resonant tunneling devices with the base contact to the quantum well. In Proc. 1997 International Semiconductor Conference, CAS '97 (pp. 139-142)
Lepsa, M.I. ; Roer, van de, T.G. ; Kwaspen, J.J.M. ; Smalbrugge, E. ; Vleuten, van der, W.C. ; Kaufmann, L.M.F. / Three terminal double barrier resonant tunneling devices with the base contact to the quantum well. Proc. 1997 International Semiconductor Conference, CAS '97. 1997. pp. 139-142
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title = "Three terminal double barrier resonant tunneling devices with the base contact to the quantum well",
author = "M.I. Lepsa and {Roer, van de}, T.G. and J.J.M. Kwaspen and E. Smalbrugge and {Vleuten, van der}, W.C. and L.M.F. Kaufmann",
year = "1997",
language = "English",
isbn = "0-7803-3804-9",
pages = "139--142",
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Lepsa, MI, Roer, van de, TG, Kwaspen, JJM, Smalbrugge, E, Vleuten, van der, WC & Kaufmann, LMF 1997, Three terminal double barrier resonant tunneling devices with the base contact to the quantum well. in Proc. 1997 International Semiconductor Conference, CAS '97. pp. 139-142, conference; Proc. 1997 International Semiconductor Conference, CAS '97, Sinaia, Romania, 8-11 October 1997, 1/01/97.

Three terminal double barrier resonant tunneling devices with the base contact to the quantum well. / Lepsa, M.I.; Roer, van de, T.G.; Kwaspen, J.J.M.; Smalbrugge, E.; Vleuten, van der, W.C.; Kaufmann, L.M.F.

Proc. 1997 International Semiconductor Conference, CAS '97. 1997. p. 139-142.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Three terminal double barrier resonant tunneling devices with the base contact to the quantum well

AU - Lepsa, M.I.

AU - Roer, van de, T.G.

AU - Kwaspen, J.J.M.

AU - Smalbrugge, E.

AU - Vleuten, van der, W.C.

AU - Kaufmann, L.M.F.

PY - 1997

Y1 - 1997

M3 - Conference contribution

SN - 0-7803-3804-9

SP - 139

EP - 142

BT - Proc. 1997 International Semiconductor Conference, CAS '97

ER -

Lepsa MI, Roer, van de TG, Kwaspen JJM, Smalbrugge E, Vleuten, van der WC, Kaufmann LMF. Three terminal double barrier resonant tunneling devices with the base contact to the quantum well. In Proc. 1997 International Semiconductor Conference, CAS '97. 1997. p. 139-142