Three terminal double barrier resonant tunneling devices based on the direct contacting of the quantum well

M.I. Lepsa, T.G. Roer, van de, J.J.M. Kwaspen, W.C. Vleuten, van der, L.M.F. Kaufmann

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

39 Downloads (Pure)

Abstract

Three terminal (31) Double Barrier Resonant Tunneling (DBR1) devices with the base contact to the quantum well have been fabricated from GaAs/AlAs material system. The plane of the very thin quantum well is reached using high selective etching processes and a nonalloyed Ti/Pt/Au metallization scheme is used to obtain a Schottky base contact. DC and AC electrical measurements demonstrate that the base contact lies on the quantum well of the device DBRT structure and the base voltage modulates the collector current. It is shown that the electrical characteristics of these devices enlarge the possibilities of investigation of the DBRT structures and suggest important applications in high-speed electronics.
Original languageEnglish
Title of host publicationProc. 21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE '97
Pages79-80
Publication statusPublished - 1997
Event21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe - Scheveningen, Netherlands
Duration: 25 May 199728 May 1997

Conference

Conference21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe
CountryNetherlands
CityScheveningen
Period25/05/9728/05/97

Fingerprint Dive into the research topics of 'Three terminal double barrier resonant tunneling devices based on the direct contacting of the quantum well'. Together they form a unique fingerprint.

Cite this