Three terminal (31) Double Barrier Resonant Tunneling (DBR1) devices with the base contact to the quantum well have been fabricated from GaAs/AlAs material system. The plane of the very thin quantum well is reached using high selective etching processes and a nonalloyed Ti/Pt/Au metallization scheme is used to obtain a Schottky base contact. DC and AC electrical measurements demonstrate that the base contact lies on the quantum well of the device DBRT structure and the base voltage modulates the collector current. It is shown that the electrical characteristics of these devices enlarge the possibilities of investigation of the DBRT structures and suggest important applications in high-speed electronics.
|Title of host publication||Proc. 21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE '97|
|Publication status||Published - 1997|
|Event||21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe - Scheveningen, Netherlands|
Duration: 25 May 1997 → 28 May 1997
|Conference||21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe|
|Period||25/05/97 → 28/05/97|