Three terminal double barrier resonant tunneling devices based on the direct contacting of the quantum well

M.I. Lepsa; T.G. Roer, van de; J.J.M. Kwaspen; W.C. Vleuten, van der; L.M.F. Kaufmann

Three terminal double barrier resonant tunneling devices based on the direct contacting of the quantum well

M.I. Lepsa, T.G. Roer, van de, J.J.M. Kwaspen, W.C. Vleuten, van der, L.M.F. Kaufmann

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Three terminal (31) Double Barrier Resonant Tunneling (DBR1) devices with the base contact to the quantum well have been fabricated from GaAs/AlAs material system. The plane of the very thin quantum well is reached using high selective etching processes and a nonalloyed Ti/Pt/Au metallization scheme is used to obtain a Schottky base contact. DC and AC electrical measurements demonstrate that the base contact lies on the quantum well of the device DBRT structure and the base voltage modulates the collector current. It is shown that the electrical characteristics of these devices enlarge the possibilities of investigation of the DBRT structures and suggest important applications in high-speed electronics.

Original language	English
Title of host publication	Proc. 21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE '97
Pages	79-80
Publication status	Published - 1997
Event	21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe - Scheveningen, Netherlands Duration: 25 May 1997 → 28 May 1997

Conference

Conference	21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe
Country/Territory	Netherlands
City	Scheveningen
Period	25/05/97 → 28/05/97

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@inproceedings{eafaddaa8de64c42bb03df6090459699,

title = "Three terminal double barrier resonant tunneling devices based on the direct contacting of the quantum well",

abstract = "Three terminal (31) Double Barrier Resonant Tunneling (DBR1) devices with the base contact to the quantum well have been fabricated from GaAs/AlAs material system. The plane of the very thin quantum well is reached using high selective etching processes and a nonalloyed Ti/Pt/Au metallization scheme is used to obtain a Schottky base contact. DC and AC electrical measurements demonstrate that the base contact lies on the quantum well of the device DBRT structure and the base voltage modulates the collector current. It is shown that the electrical characteristics of these devices enlarge the possibilities of investigation of the DBRT structures and suggest important applications in high-speed electronics.",

author = "M.I. Lepsa and {Roer, van de}, T.G. and J.J.M. Kwaspen and {Vleuten, van der}, W.C. and L.M.F. Kaufmann",

year = "1997",

language = "English",

isbn = "90-9010767-3",

pages = "79--80",

booktitle = "Proc. 21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE '97",

note = "21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe ; Conference date: 25-05-1997 Through 28-05-1997",

}

Lepsa, MI, Roer, van de, TG, Kwaspen, JJM, Vleuten, van der, WC & Kaufmann, LMF 1997, Three terminal double barrier resonant tunneling devices based on the direct contacting of the quantum well. in Proc. 21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE '97. pp. 79-80, 21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, Scheveningen, Netherlands, 25/05/97.

Three terminal double barrier resonant tunneling devices based on the direct contacting of the quantum well. / Lepsa, M.I.; Roer, van de, T.G.; Kwaspen, J.J.M.; Vleuten, van der, W.C.; Kaufmann, L.M.F.

Proc. 21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE '97. 1997. p. 79-80.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Three terminal double barrier resonant tunneling devices based on the direct contacting of the quantum well

AU - Lepsa, M.I.

AU - Roer, van de, T.G.

AU - Kwaspen, J.J.M.

AU - Vleuten, van der, W.C.

AU - Kaufmann, L.M.F.

PY - 1997

Y1 - 1997

N2 - Three terminal (31) Double Barrier Resonant Tunneling (DBR1) devices with the base contact to the quantum well have been fabricated from GaAs/AlAs material system. The plane of the very thin quantum well is reached using high selective etching processes and a nonalloyed Ti/Pt/Au metallization scheme is used to obtain a Schottky base contact. DC and AC electrical measurements demonstrate that the base contact lies on the quantum well of the device DBRT structure and the base voltage modulates the collector current. It is shown that the electrical characteristics of these devices enlarge the possibilities of investigation of the DBRT structures and suggest important applications in high-speed electronics.

AB - Three terminal (31) Double Barrier Resonant Tunneling (DBR1) devices with the base contact to the quantum well have been fabricated from GaAs/AlAs material system. The plane of the very thin quantum well is reached using high selective etching processes and a nonalloyed Ti/Pt/Au metallization scheme is used to obtain a Schottky base contact. DC and AC electrical measurements demonstrate that the base contact lies on the quantum well of the device DBRT structure and the base voltage modulates the collector current. It is shown that the electrical characteristics of these devices enlarge the possibilities of investigation of the DBRT structures and suggest important applications in high-speed electronics.

M3 - Conference contribution

SN - 90-9010767-3

SP - 79

EP - 80

BT - Proc. 21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE '97

T2 - 21st Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe

Y2 - 25 May 1997 through 28 May 1997

ER -

Three terminal double barrier resonant tunneling devices based on the direct contacting of the quantum well

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