Three level masking for improved aspect ratio InP-based photonic crystals

F. Karouta, B. Docter, E.J. Geluk, M.K. Smit, P. Kaspar

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

A three-level masking technique is used to improve the aspect ratio of InP-based photonic crystals. The masking consists of a ZEP/Cr/SiOx stack where the ZEP layer is used to open the Cr which on its turn is a good mask for opening the 500 nm thick SiOx layer. Subsequently InP is etched in an ICP process using Cl2:O2. Very high aspect ratios could be achieved in holes ranging from 130 up to 270 nm in diameter. A maximum aspect ratio of >20 is obtained with the narrowest holes having diameters of 180 and 130 nm.
Original languageEnglish
Title of host publication20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008, 25-29 May 2008
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
PagesWeP25-1/4
ISBN (Print)978-1-4244-2258-6
DOIs
Publication statusPublished - 2008

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