Three level masking for improved aspect ratio InP-based photonic crystals

F. Karouta; B. Docter; E.J. Geluk; M.K. Smit; P. Kaspar

doi:10.1109/ICIPRM.2008.4703034

Three level masking for improved aspect ratio InP-based photonic crystals

F. Karouta, B. Docter, E.J. Geluk, M.K. Smit, P. Kaspar

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

A three-level masking technique is used to improve the aspect ratio of InP-based photonic crystals. The masking consists of a ZEP/Cr/SiOx stack where the ZEP layer is used to open the Cr which on its turn is a good mask for opening the 500 nm thick SiOx layer. Subsequently InP is etched in an ICP process using Cl2:O2. Very high aspect ratios could be achieved in holes ranging from 130 up to 270 nm in diameter. A maximum aspect ratio of >20 is obtained with the narrowest holes having diameters of 180 and 130 nm.

Original language	English
Title of host publication	20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008, 25-29 May 2008
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	WeP25-1/4
ISBN (Print)	978-1-4244-2258-6
DOIs	https://doi.org/10.1109/ICIPRM.2008.4703034
Publication status	Published - 2008

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10.1109/ICIPRM.2008.4703034

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title = "Three level masking for improved aspect ratio InP-based photonic crystals",

abstract = "A three-level masking technique is used to improve the aspect ratio of InP-based photonic crystals. The masking consists of a ZEP/Cr/SiOx stack where the ZEP layer is used to open the Cr which on its turn is a good mask for opening the 500 nm thick SiOx layer. Subsequently InP is etched in an ICP process using Cl2:O2. Very high aspect ratios could be achieved in holes ranging from 130 up to 270 nm in diameter. A maximum aspect ratio of >20 is obtained with the narrowest holes having diameters of 180 and 130 nm.",

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Three level masking for improved aspect ratio InP-based photonic crystals. / Karouta, F.; Docter, B.; Geluk, E.J. et al.

20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008, 25-29 May 2008. Piscataway : Institute of Electrical and Electronics Engineers, 2008. p. WeP25-1/4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Three level masking for improved aspect ratio InP-based photonic crystals

AU - Karouta, F.

AU - Docter, B.

AU - Geluk, E.J.

AU - Smit, M.K.

AU - Kaspar, P.

PY - 2008

Y1 - 2008

N2 - A three-level masking technique is used to improve the aspect ratio of InP-based photonic crystals. The masking consists of a ZEP/Cr/SiOx stack where the ZEP layer is used to open the Cr which on its turn is a good mask for opening the 500 nm thick SiOx layer. Subsequently InP is etched in an ICP process using Cl2:O2. Very high aspect ratios could be achieved in holes ranging from 130 up to 270 nm in diameter. A maximum aspect ratio of >20 is obtained with the narrowest holes having diameters of 180 and 130 nm.

AB - A three-level masking technique is used to improve the aspect ratio of InP-based photonic crystals. The masking consists of a ZEP/Cr/SiOx stack where the ZEP layer is used to open the Cr which on its turn is a good mask for opening the 500 nm thick SiOx layer. Subsequently InP is etched in an ICP process using Cl2:O2. Very high aspect ratios could be achieved in holes ranging from 130 up to 270 nm in diameter. A maximum aspect ratio of >20 is obtained with the narrowest holes having diameters of 180 and 130 nm.

U2 - 10.1109/ICIPRM.2008.4703034

DO - 10.1109/ICIPRM.2008.4703034

M3 - Conference contribution

SN - 978-1-4244-2258-6

SP - WeP25-1/4

BT - 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008, 25-29 May 2008

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Three level masking for improved aspect ratio InP-based photonic crystals

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