Third Harmonic Circulating Current Injection Effects on Optimum Silicon Area of Delta-CHB STATCOM

Dayane do Carmo Mendonça; João Guimarães França; Heverton Augusto Pereira; Seleme Isaac Seleme Júnior; Allan Fagner Cupertino

doi:10.1109/spec56436.2023.10408553

Third Harmonic Circulating Current Injection Effects on Optimum Silicon Area of Delta-CHB STATCOM

Dayane do Carmo Mendonça
, João Guimarães França
, Heverton Augusto Pereira
, Seleme Isaac Seleme Júnior
, Allan Fagner Cupertino

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

This work aims to identify the impact of third harmonic circulating current injection (THCCI) in a Cascaded H-bridge converter in delta configuration (Delta-CHB) for Static Synchronous Compensator (STATCOM) application. The analyses consist of evaluating the impact of THCCI on the silicon area of semiconductor devices, based on a typical IGBT/Diode model to determine the nominal current of the devices for a given maximum junction temperature. A coefficient of determination higher than 89% was obtained for all modeled variables. The results showed an increase of 42.4% in the active area of the IGBT and 42.2% in the active area of the diode when the peak cluster current increased by 62%.

Original language	English
Title of host publication	2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP)
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	8
ISBN (Electronic)	979-8-3503-2112-8
DOIs	https://doi.org/10.1109/spec56436.2023.10408553
Publication status	Published - 26 Nov 2023
Externally published	Yes
Event	2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference, SPEC/COBEP - Florianopolis, Brazil Duration: 26 Nov 2023 → 29 Nov 2023

Conference

Conference	2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference, SPEC/COBEP
Country/Territory	Brazil
City	Florianopolis
Period	26/11/23 → 29/11/23

Funding

The authors are grateful for the financial support provided by the P&D project ANEEL/CEMIG D0727, CNPq (Conselho Nacional de Desenvolvi-mento Científico e Tecnológico) - projects 311056/2020-2, 408059/2021-4 and 307172/2022-8 and FAPEMIG (Fundac¸ão de Amparo à Pesquisa do Estado de Minas Gerais) - project APQ-02556-21. In addition, this work was carried out with the support of the CAPES (Coordenac¸ão de Aperfeic¸oamento de Pessoal de Nível Superior) - Financing Code 001 and Academic Excellence Program (PROEX).

Keywords

Delta-CHB
STATCOM
silicon area
third harmonic

Access to Document

10.1109/spec56436.2023.10408553

Cite this

do Carmo Mendonça, D., Guimarães França, J., Pereira, H. A., Seleme Júnior, S. I., & Cupertino, A. F. (2023). Third Harmonic Circulating Current Injection Effects on Optimum Silicon Area of Delta-CHB STATCOM. In 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP) Article 10408553 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/spec56436.2023.10408553

@inproceedings{c14fe3ac86a942db95c88999eec74d57,

title = "Third Harmonic Circulating Current Injection Effects on Optimum Silicon Area of Delta-CHB STATCOM",

abstract = "This work aims to identify the impact of third harmonic circulating current injection (THCCI) in a Cascaded H-bridge converter in delta configuration (Delta-CHB) for Static Synchronous Compensator (STATCOM) application. The analyses consist of evaluating the impact of THCCI on the silicon area of semiconductor devices, based on a typical IGBT/Diode model to determine the nominal current of the devices for a given maximum junction temperature. A coefficient of determination higher than 89\% was obtained for all modeled variables. The results showed an increase of 42.4\% in the active area of the IGBT and 42.2\% in the active area of the diode when the peak cluster current increased by 62\%.",

keywords = "Delta-CHB, STATCOM, silicon area, third harmonic",

author = "\{do Carmo Mendon{\c c}a\}, Dayane and \{Guimar{\~a}es Fran{\c c}a\}, Jo{\~a}o and Pereira, \{Heverton Augusto\} and \{Seleme J{\'u}nior\}, \{Seleme Isaac\} and Cupertino, \{Allan Fagner\}",

year = "2023",

month = nov,

day = "26",

doi = "10.1109/spec56436.2023.10408553",

language = "English",

booktitle = "2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference, SPEC/COBEP ; Conference date: 26-11-2023 Through 29-11-2023",

}

do Carmo Mendonça, D, Guimarães França, J, Pereira, HA, Seleme Júnior, SI & Cupertino, AF 2023, Third Harmonic Circulating Current Injection Effects on Optimum Silicon Area of Delta-CHB STATCOM. in 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP)., 10408553, Institute of Electrical and Electronics Engineers, 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference, SPEC/COBEP, Florianopolis, Brazil, 26/11/23. https://doi.org/10.1109/spec56436.2023.10408553

Third Harmonic Circulating Current Injection Effects on Optimum Silicon Area of Delta-CHB STATCOM. / do Carmo Mendonça, Dayane; Guimarães França, João; Pereira, Heverton Augusto et al.
2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP). Institute of Electrical and Electronics Engineers, 2023. 10408553.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Third Harmonic Circulating Current Injection Effects on Optimum Silicon Area of Delta-CHB STATCOM

AU - do Carmo Mendonça, Dayane

AU - Guimarães França, João

AU - Pereira, Heverton Augusto

AU - Seleme Júnior, Seleme Isaac

AU - Cupertino, Allan Fagner

PY - 2023/11/26

Y1 - 2023/11/26

N2 - This work aims to identify the impact of third harmonic circulating current injection (THCCI) in a Cascaded H-bridge converter in delta configuration (Delta-CHB) for Static Synchronous Compensator (STATCOM) application. The analyses consist of evaluating the impact of THCCI on the silicon area of semiconductor devices, based on a typical IGBT/Diode model to determine the nominal current of the devices for a given maximum junction temperature. A coefficient of determination higher than 89% was obtained for all modeled variables. The results showed an increase of 42.4% in the active area of the IGBT and 42.2% in the active area of the diode when the peak cluster current increased by 62%.

AB - This work aims to identify the impact of third harmonic circulating current injection (THCCI) in a Cascaded H-bridge converter in delta configuration (Delta-CHB) for Static Synchronous Compensator (STATCOM) application. The analyses consist of evaluating the impact of THCCI on the silicon area of semiconductor devices, based on a typical IGBT/Diode model to determine the nominal current of the devices for a given maximum junction temperature. A coefficient of determination higher than 89% was obtained for all modeled variables. The results showed an increase of 42.4% in the active area of the IGBT and 42.2% in the active area of the diode when the peak cluster current increased by 62%.

KW - Delta-CHB

KW - STATCOM

KW - silicon area

KW - third harmonic

UR - https://www.scopus.com/pages/publications/85185807264

U2 - 10.1109/spec56436.2023.10408553

DO - 10.1109/spec56436.2023.10408553

M3 - Conference contribution

BT - 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP)

PB - Institute of Electrical and Electronics Engineers

T2 - 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference, SPEC/COBEP

Y2 - 26 November 2023 through 29 November 2023

ER -

do Carmo Mendonça D, Guimarães França J, Pereira HA, Seleme Júnior SI, Cupertino AF. Third Harmonic Circulating Current Injection Effects on Optimum Silicon Area of Delta-CHB STATCOM. In 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP). Institute of Electrical and Electronics Engineers. 2023. 10408553 doi: 10.1109/spec56436.2023.10408553

Third Harmonic Circulating Current Injection Effects on Optimum Silicon Area of Delta-CHB STATCOM

Abstract

Conference

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this