Thin SIMOX SOI material for half-micron CMOS

H. Lifka; P. H. Woerlee

Thin SIMOX SOI material for half-micron CMOS

H. Lifka
, P. H. Woerlee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The properties of half-micron CMOS devices fabricated on thin film SIMOX SOI with different material quality will be presented. The gate oxide quality, diode leakage current and breakdown voltage of transistors will be shown. The influence of LDD dope and TiSi₂salicide on the parasitic bipolar transistor breakdown is presented. Temperature measurements on SOI and bulk transistors are presented which show an increased heating effect for thin film SOI transistors.

Original language	English
Title of host publication	ESSDERC 1990 - 20th European Solid State Device Research Conference
Editors	W. Eccleston, P. J. Rosser
Publisher	IEEE Computer Society
Pages	453-456
Number of pages	4
ISBN (Print)	0750300655
Publication status	Published - 1 Jan 1990
Externally published	Yes
Event	20th European Solid State Device Research Conference, ESSDERC 1990 - Nottingham, United Kingdom Duration: 10 Sept 1990 → 13 Sept 1990

Conference

Conference	20th European Solid State Device Research Conference, ESSDERC 1990
Country/Territory	United Kingdom
City	Nottingham
Period	10/09/90 → 13/09/90

Cite this

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title = "Thin SIMOX SOI material for half-micron CMOS",

abstract = "The properties of half-micron CMOS devices fabricated on thin film SIMOX SOI with different material quality will be presented. The gate oxide quality, diode leakage current and breakdown voltage of transistors will be shown. The influence of LDD dope and TiSi2salicide on the parasitic bipolar transistor breakdown is presented. Temperature measurements on SOI and bulk transistors are presented which show an increased heating effect for thin film SOI transistors.",

author = "H. Lifka and Woerlee, \{P. H.\}",

year = "1990",

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language = "English",

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pages = "453--456",

editor = "W. Eccleston and Rosser, \{P. J.\}",

booktitle = "ESSDERC 1990 - 20th European Solid State Device Research Conference",

publisher = "IEEE Computer Society",

address = "United States",

note = "20th European Solid State Device Research Conference, ESSDERC 1990 ; Conference date: 10-09-1990 Through 13-09-1990",

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T1 - Thin SIMOX SOI material for half-micron CMOS

AU - Lifka, H.

AU - Woerlee, P. H.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - The properties of half-micron CMOS devices fabricated on thin film SIMOX SOI with different material quality will be presented. The gate oxide quality, diode leakage current and breakdown voltage of transistors will be shown. The influence of LDD dope and TiSi2salicide on the parasitic bipolar transistor breakdown is presented. Temperature measurements on SOI and bulk transistors are presented which show an increased heating effect for thin film SOI transistors.

AB - The properties of half-micron CMOS devices fabricated on thin film SIMOX SOI with different material quality will be presented. The gate oxide quality, diode leakage current and breakdown voltage of transistors will be shown. The influence of LDD dope and TiSi2salicide on the parasitic bipolar transistor breakdown is presented. Temperature measurements on SOI and bulk transistors are presented which show an increased heating effect for thin film SOI transistors.

UR - https://www.scopus.com/pages/publications/0342344817

M3 - Conference contribution

AN - SCOPUS:0342344817

SN - 0750300655

SP - 453

EP - 456

BT - ESSDERC 1990 - 20th European Solid State Device Research Conference

A2 - Eccleston, W.

A2 - Rosser, P. J.

PB - IEEE Computer Society

T2 - 20th European Solid State Device Research Conference, ESSDERC 1990

Y2 - 10 September 1990 through 13 September 1990

ER -

Thin SIMOX SOI material for half-micron CMOS

Abstract

Conference

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