Thin film cavity ringdown spectroscopy and second harmonic generation on thin a-Si:H films

I. M.P. Aarts; B. Hoex; J. J.H. Gielis; C. M. Leewis; A. H.M. Smets; R. Engeln; M. Nesládek; W. M.M. Kessels; M. C.M. Van de Sanden

Thin film cavity ringdown spectroscopy and second harmonic generation on thin a-Si:H films

I. M.P. Aarts, B. Hoex, J. J.H. Gielis, C. M. Leewis, A. H.M. Smets, R. Engeln, M. Nesládek, W. M.M. Kessels, M. C.M. Van de Sanden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

A set of 8 rf deposited a-Si:H thin films of various thickness (4-1031nm) have been used to explore the applicability of two optical techniques, thin film cavity ringdown spectroscopy (tf-CRDS) and second harmonic generation (SHG), for the measurement of small defect-related absorptions. In this paper we will give a first overview of the different aspects of these techniques, which are novel in the field of amorphous silicon materials. It is shown that tf-CRDS is capable of measuring defect-related absorptions (associated with dangling bonds) as small as 10^-7 for a single measurement, without the need for elaborate calibration procedures. The results are compared with photothermal deflection spectroscopy (PDS) for a broad spectral range (0.7 -1.7 eV) and show good agreement. Furthermore the existence of a defect-rich surface layer with a defect density of 1.1 × 10¹² cm^-2 has been proven. The absorption spectrum of a 4 nm thin film has revealed a different spectral signature than a bulk dominated (1031 nm) film. The SHG experiments on a-Si:H films have shown that the second harmonic signal arises from the surface states and polarization dependent studies have revealed that the surface states probed have an ∞m-symmetry. From this it can be deduced that the absorbing surface states are isotropically distributed. A spectral scan suggests that the second harmonic signal, whose origin has not been unrevealed yet, has a resonance at an incident photon energy of 1.22 eV.

Original language	English
Title of host publication	Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A.
Editors	J.R. Abelson
Place of Publication	Warrendale
Publisher	Materials Research Society
Pages	111-116
Number of pages	6
ISBN (Print)	1-558-99699-0
Publication status	Published - 1 Dec 2003
Event	2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium - San Francisco, United States Duration: 22 Apr 2003 → 25 Apr 2003

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	762
ISSN (Print)	0272-9172

Conference

Conference	2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium
Country/Territory	United States
City	San Francisco
Period	22/04/03 → 25/04/03

Cite this

Aarts, I. M. P., Hoex, B., Gielis, J. J. H., Leewis, C. M., Smets, A. H. M., Engeln, R., Nesládek, M., Kessels, W. M. M., & Van de Sanden, M. C. M. (2003). Thin film cavity ringdown spectroscopy and second harmonic generation on thin a-Si:H films. In J. R. Abelson (Ed.), Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A. (pp. 111-116). (Materials Research Society Symposium Proceedings; Vol. 762). Materials Research Society.

Aarts, I. M.P. ; Hoex, B. ; Gielis, J. J.H. ; Leewis, C. M. ; Smets, A. H.M. ; Engeln, R. ; Nesládek, M. ; Kessels, W. M.M. ; Van de Sanden, M. C.M. / Thin film cavity ringdown spectroscopy and second harmonic generation on thin a-Si:H films. Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A.. editor / J.R. Abelson. Warrendale : Materials Research Society, 2003. pp. 111-116 (Materials Research Society Symposium Proceedings).

@inproceedings{0794ae193c66488ebecc6048480d6d28,

title = "Thin film cavity ringdown spectroscopy and second harmonic generation on thin a-Si:H films",

abstract = "A set of 8 rf deposited a-Si:H thin films of various thickness (4-1031nm) have been used to explore the applicability of two optical techniques, thin film cavity ringdown spectroscopy (tf-CRDS) and second harmonic generation (SHG), for the measurement of small defect-related absorptions. In this paper we will give a first overview of the different aspects of these techniques, which are novel in the field of amorphous silicon materials. It is shown that tf-CRDS is capable of measuring defect-related absorptions (associated with dangling bonds) as small as 10-7 for a single measurement, without the need for elaborate calibration procedures. The results are compared with photothermal deflection spectroscopy (PDS) for a broad spectral range (0.7 -1.7 eV) and show good agreement. Furthermore the existence of a defect-rich surface layer with a defect density of 1.1 × 1012 cm-2 has been proven. The absorption spectrum of a 4 nm thin film has revealed a different spectral signature than a bulk dominated (1031 nm) film. The SHG experiments on a-Si:H films have shown that the second harmonic signal arises from the surface states and polarization dependent studies have revealed that the surface states probed have an ∞m-symmetry. From this it can be deduced that the absorbing surface states are isotropically distributed. A spectral scan suggests that the second harmonic signal, whose origin has not been unrevealed yet, has a resonance at an incident photon energy of 1.22 eV.",

author = "Aarts, {I. M.P.} and B. Hoex and Gielis, {J. J.H.} and Leewis, {C. M.} and Smets, {A. H.M.} and R. Engeln and M. Nesl{\'a}dek and Kessels, {W. M.M.} and {Van de Sanden}, {M. C.M.}",

year = "2003",

month = dec,

day = "1",

language = "English",

isbn = "1-558-99699-0",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "111--116",

editor = "J.R. Abelson",

booktitle = "Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A.",

address = "United States",

note = "2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium ; Conference date: 22-04-2003 Through 25-04-2003",

}

Aarts, IMP, Hoex, B, Gielis, JJH, Leewis, CM, Smets, AHM, Engeln, R, Nesládek, M, Kessels, WMM & Van de Sanden, MCM 2003, Thin film cavity ringdown spectroscopy and second harmonic generation on thin a-Si:H films. in JR Abelson (ed.), Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A.. Materials Research Society Symposium Proceedings, vol. 762, Materials Research Society, Warrendale, pp. 111-116, 2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium, San Francisco, California, United States, 22/04/03.

Thin film cavity ringdown spectroscopy and second harmonic generation on thin a-Si:H films. / Aarts, I. M.P.; Hoex, B.; Gielis, J. J.H.; Leewis, C. M.; Smets, A. H.M.; Engeln, R.; Nesládek, M.; Kessels, W. M.M.; Van de Sanden, M. C.M.

Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A.. ed. / J.R. Abelson. Warrendale : Materials Research Society, 2003. p. 111-116 (Materials Research Society Symposium Proceedings; Vol. 762).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Thin film cavity ringdown spectroscopy and second harmonic generation on thin a-Si:H films

AU - Aarts, I. M.P.

AU - Hoex, B.

AU - Gielis, J. J.H.

AU - Leewis, C. M.

AU - Smets, A. H.M.

AU - Engeln, R.

AU - Nesládek, M.

AU - Kessels, W. M.M.

AU - Van de Sanden, M. C.M.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - A set of 8 rf deposited a-Si:H thin films of various thickness (4-1031nm) have been used to explore the applicability of two optical techniques, thin film cavity ringdown spectroscopy (tf-CRDS) and second harmonic generation (SHG), for the measurement of small defect-related absorptions. In this paper we will give a first overview of the different aspects of these techniques, which are novel in the field of amorphous silicon materials. It is shown that tf-CRDS is capable of measuring defect-related absorptions (associated with dangling bonds) as small as 10-7 for a single measurement, without the need for elaborate calibration procedures. The results are compared with photothermal deflection spectroscopy (PDS) for a broad spectral range (0.7 -1.7 eV) and show good agreement. Furthermore the existence of a defect-rich surface layer with a defect density of 1.1 × 1012 cm-2 has been proven. The absorption spectrum of a 4 nm thin film has revealed a different spectral signature than a bulk dominated (1031 nm) film. The SHG experiments on a-Si:H films have shown that the second harmonic signal arises from the surface states and polarization dependent studies have revealed that the surface states probed have an ∞m-symmetry. From this it can be deduced that the absorbing surface states are isotropically distributed. A spectral scan suggests that the second harmonic signal, whose origin has not been unrevealed yet, has a resonance at an incident photon energy of 1.22 eV.

AB - A set of 8 rf deposited a-Si:H thin films of various thickness (4-1031nm) have been used to explore the applicability of two optical techniques, thin film cavity ringdown spectroscopy (tf-CRDS) and second harmonic generation (SHG), for the measurement of small defect-related absorptions. In this paper we will give a first overview of the different aspects of these techniques, which are novel in the field of amorphous silicon materials. It is shown that tf-CRDS is capable of measuring defect-related absorptions (associated with dangling bonds) as small as 10-7 for a single measurement, without the need for elaborate calibration procedures. The results are compared with photothermal deflection spectroscopy (PDS) for a broad spectral range (0.7 -1.7 eV) and show good agreement. Furthermore the existence of a defect-rich surface layer with a defect density of 1.1 × 1012 cm-2 has been proven. The absorption spectrum of a 4 nm thin film has revealed a different spectral signature than a bulk dominated (1031 nm) film. The SHG experiments on a-Si:H films have shown that the second harmonic signal arises from the surface states and polarization dependent studies have revealed that the surface states probed have an ∞m-symmetry. From this it can be deduced that the absorbing surface states are isotropically distributed. A spectral scan suggests that the second harmonic signal, whose origin has not been unrevealed yet, has a resonance at an incident photon energy of 1.22 eV.

UR - http://www.scopus.com/inward/record.url?scp=1642479977&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1-558-99699-0

T3 - Materials Research Society Symposium Proceedings

SP - 111

EP - 116

BT - Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A.

A2 - Abelson, J.R.

PB - Materials Research Society

CY - Warrendale

T2 - 2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium

Y2 - 22 April 2003 through 25 April 2003

ER -

Aarts IMP, Hoex B, Gielis JJH, Leewis CM, Smets AHM, Engeln R et al. Thin film cavity ringdown spectroscopy and second harmonic generation on thin a-Si:H films. In Abelson JR, editor, Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A.. Warrendale: Materials Research Society. 2003. p. 111-116. (Materials Research Society Symposium Proceedings).

Thin film cavity ringdown spectroscopy and second harmonic generation on thin a-Si:H films

Abstract

Publication series

Conference

Other files and links

Fingerprint

Cite this