Thickness and composition of ultrathin SiO2 layers on Si

C. van der Marel; M.A. Verheijen; Y. Tamminga; R.H.W. Pijnenburg; N. Tombros; F. Cubaynes

doi:10.1116/1.1701864

Thickness and composition of ultrathin SiO₂ layers on Si

C. van der Marel
, M.A. Verheijen
, Y. Tamminga
, R.H.W. Pijnenburg
, N. Tombros
, F. Cubaynes

Research output: Contribution to journal › Article › Academic › peer-review

12 Citations (Scopus)

Abstract

The thickness and composition of ultrathin SiO₂ layers in Si were determined using x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS) and a model analysis of XPS. The model analysis was found to be providing accurate results and the deviations from the optical results were attributed to the surface contamination of the samples with hydrocarbons. The results of TEM analysis were found to be converging with the actual results when the thickness exceeded 2.5nm. But the analysis provided a thickness larger than RBS or XPS results when the thicknesses of SiO₂ layers were less than 2.5nm.

Original language	English
Pages (from-to)	1572-1578
Number of pages	7
Journal	Journal of Vacuum Science and Technology A
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1701864
Publication status	Published - 1 Jul 2004

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AU - van der Marel, C.

AU - Verheijen, M.A.

AU - Tamminga, Y.

AU - Pijnenburg, R.H.W.

AU - Tombros, N.

AU - Cubaynes, F.

PY - 2004/7/1

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N2 - The thickness and composition of ultrathin SiO2 layers in Si were determined using x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS) and a model analysis of XPS. The model analysis was found to be providing accurate results and the deviations from the optical results were attributed to the surface contamination of the samples with hydrocarbons. The results of TEM analysis were found to be converging with the actual results when the thickness exceeded 2.5nm. But the analysis provided a thickness larger than RBS or XPS results when the thicknesses of SiO2 layers were less than 2.5nm.

AB - The thickness and composition of ultrathin SiO2 layers in Si were determined using x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS) and a model analysis of XPS. The model analysis was found to be providing accurate results and the deviations from the optical results were attributed to the surface contamination of the samples with hydrocarbons. The results of TEM analysis were found to be converging with the actual results when the thickness exceeded 2.5nm. But the analysis provided a thickness larger than RBS or XPS results when the thicknesses of SiO2 layers were less than 2.5nm.

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JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 4

ER -

Thickness and composition of ultrathin SiO₂ layers on Si

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