The thickness and composition of ultrathin SiO2 layers in Si were determined using x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS) and a model analysis of XPS. The model analysis was found to be providing accurate results and the deviations from the optical results were attributed to the surface contamination of the samples with hydrocarbons. The results of TEM analysis were found to be converging with the actual results when the thickness exceeded 2.5nm. But the analysis provided a thickness larger than RBS or XPS results when the thicknesses of SiO2 layers were less than 2.5nm.
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films|
|Publication status||Published - 1 Jul 2004|