Thermal Stress Reduction of Power MOSFET in Electric Drive Application with Dynamic Gate Driving Strategy

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Abstract

While operating an electric drive under different load conditions, power semiconductor devices experience thermal
stress which compromises lifetime. In this paper, a model based gate voltage control is proposed to reduce the
thermal stress by shaping the profile of conduction losses. Thermal stability criterions are introduced, which
confine the gate voltage range to prevent current focalization and local heat up. This method is verified by using a
custom proof-of-concept gate driver that supplies an adjustable three-level gate voltage. A three-phase electric
drive is prototyped, on which power cycling tests are conducted and the results confirm the thermal control
method.
Original languageEnglish
Title of host publication2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
PublisherInstitute of Electrical and Electronics Engineers
Pages720-727
Number of pages8
ISBN (Electronic)978-1-7281-8949-9
DOIs
Publication statusPublished - 21 Jul 2021
Event36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021 - Phoenix, United States
Duration: 14 Jun 202117 Jun 2021
Conference number: 36

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021
Abbreviated titleAPEC 2021
Country/TerritoryUnited States
CityPhoenix
Period14/06/2117/06/21

Keywords

  • Electric drive
  • Gate driver
  • Lifetime
  • Modelling
  • Power MOSFET

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