Abstract
While operating an electric drive under different load conditions, power semiconductor devices experience thermal
stress which compromises lifetime. In this paper, a model based gate voltage control is proposed to reduce the
thermal stress by shaping the profile of conduction losses. Thermal stability criterions are introduced, which
confine the gate voltage range to prevent current focalization and local heat up. This method is verified by using a
custom proof-of-concept gate driver that supplies an adjustable three-level gate voltage. A three-phase electric
drive is prototyped, on which power cycling tests are conducted and the results confirm the thermal control
method.
stress which compromises lifetime. In this paper, a model based gate voltage control is proposed to reduce the
thermal stress by shaping the profile of conduction losses. Thermal stability criterions are introduced, which
confine the gate voltage range to prevent current focalization and local heat up. This method is verified by using a
custom proof-of-concept gate driver that supplies an adjustable three-level gate voltage. A three-phase electric
drive is prototyped, on which power cycling tests are conducted and the results confirm the thermal control
method.
Original language | English |
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Title of host publication | 2021 IEEE Applied Power Electronics Conference and Exposition (APEC) |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 720-727 |
Number of pages | 8 |
ISBN (Electronic) | 978-1-7281-8949-9 |
DOIs | |
Publication status | Published - 21 Jul 2021 |
Event | 36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021 - Phoenix, United States Duration: 14 Jun 2021 → 17 Jun 2021 Conference number: 36 |
Conference
Conference | 36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021 |
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Abbreviated title | APEC 2021 |
Country/Territory | United States |
City | Phoenix |
Period | 14/06/21 → 17/06/21 |
Keywords
- Electric drive
- Gate driver
- Lifetime
- Modelling
- Power MOSFET