Thermal Stress Reduction and Lifetime Improvement of Power Switches with Dynamic Gate Driving Strategy

Lie Wang; Bas J.D. Vermulst; Jorge L.  Duarte

Thermal Stress Reduction and Lifetime Improvement of Power Switches with Dynamic Gate Driving Strategy

Lie Wang, Bas J.D. Vermulst, Jorge L. Duarte

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The thermal stress and lifetime of semiconductor power switches are largely influenced by its current flow profile. Considerable thermal stress and reduced lifetime problems occur especially at low
frequency operation. In this paper, a dynamic gate driver that supplies adjustable voltage is proposed to mitigate thermal stress for lifetime improvement.

Original language	English
Title of host publication	IEEE Young Researchers Symposium in Electrical Power Engineering (YRS 2018)
Place of Publication	Brussels
Publication status	Published - 24 May 2018
Event	IEEE Young Researchers Symposium in Electrical Power Engineering (YRS 2018) - Bruxelles, Belgium Duration: 24 May 2018 → 25 May 2018 http://yrs2018.ulb.be/

Conference

Conference	IEEE Young Researchers Symposium in Electrical Power Engineering (YRS 2018)
Abbreviated title	YRS2018
Country/Territory	Belgium
City	Bruxelles
Period	24/05/18 → 25/05/18
Internet address	http://yrs2018.ulb.be/

Cite this

@inproceedings{2e160571a801444e890df6c3802be7f3,

title = "Thermal Stress Reduction and Lifetime Improvement of Power Switches with Dynamic Gate Driving Strategy",

abstract = "The thermal stress and lifetime of semiconductor power switches are largely influenced by its current flow profile. Considerable thermal stress and reduced lifetime problems occur especially at lowfrequency operation. In this paper, a dynamic gate driver that supplies adjustable voltage is proposed to mitigate thermal stress for lifetime improvement.",

author = "Lie Wang and Vermulst, {Bas J.D.} and Duarte, {Jorge L.}",

year = "2018",

month = may,

day = "24",

language = "English",

booktitle = "IEEE Young Researchers Symposium in Electrical Power Engineering (YRS 2018)",

note = "IEEE Young Researchers Symposium in Electrical Power Engineering (YRS 2018), YRS2018 ; Conference date: 24-05-2018 Through 25-05-2018",

url = "http://yrs2018.ulb.be/",

}

TY - GEN

T1 - Thermal Stress Reduction and Lifetime Improvement of Power Switches with Dynamic Gate Driving Strategy

AU - Wang, Lie

AU - Vermulst, Bas J.D.

AU - Duarte, Jorge L.

PY - 2018/5/24

Y1 - 2018/5/24

N2 - The thermal stress and lifetime of semiconductor power switches are largely influenced by its current flow profile. Considerable thermal stress and reduced lifetime problems occur especially at lowfrequency operation. In this paper, a dynamic gate driver that supplies adjustable voltage is proposed to mitigate thermal stress for lifetime improvement.

AB - The thermal stress and lifetime of semiconductor power switches are largely influenced by its current flow profile. Considerable thermal stress and reduced lifetime problems occur especially at lowfrequency operation. In this paper, a dynamic gate driver that supplies adjustable voltage is proposed to mitigate thermal stress for lifetime improvement.

M3 - Conference contribution

BT - IEEE Young Researchers Symposium in Electrical Power Engineering (YRS 2018)

CY - Brussels

T2 - IEEE Young Researchers Symposium in Electrical Power Engineering (YRS 2018)

Y2 - 24 May 2018 through 25 May 2018

ER -

Thermal Stress Reduction and Lifetime Improvement of Power Switches with Dynamic Gate Driving Strategy

Abstract

Conference

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