Thermal stress reduction and lifetime improvement of power switches with dynamic gate driving strategy

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7 Citations (Scopus)
8 Downloads (Pure)

Abstract

The thermal stress and lifetime of semiconductor power switches are largely determined by thermal cycling. Considerable thermal stress and reduced lifetime problems occur especially at low frequency operation. In this paper, an analytical model and the equivalent circuit model of power MOSFETs are derived to investigate their thermal behavior. After that, a dynamic gate driver that supplies an adjustable gate voltage is proposed to shape the power losses, thus mitigate thermal stress for lifetime improvement. Finally, the resulting semiconductor lifetime is estimated, which shows an improvement by a factor of two after applying the proposed strategy.

Original languageEnglish
Title of host publication2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe
PublisherInstitute of Electrical and Electronics Engineers
Number of pages8
ISBN (Electronic)9789075815313
DOIs
Publication statusPublished - Sep 2019
Event21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe - Via Magazzini del Cotone, Genova, Italy
Duration: 3 Sep 20195 Sep 2019
Conference number: 21
http://epe-ecce-conferences.com/epe2019/

Conference

Conference21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe
Abbreviated titleEPE 2019 ECCE
Country/TerritoryItaly
CityGenova
Period3/09/195/09/19
Internet address

Keywords

  • Conduction losses
  • Device modeling
  • Device simulation
  • Intelligent Power Module
  • MOSFET

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