Abstract
The thermal stress and lifetime of semiconductor power switches are largely determined by thermal cycling. Considerable thermal stress and reduced lifetime problems occur especially at low frequency operation. In this paper, an analytical model and the equivalent circuit model of power MOSFETs are derived to investigate their thermal behavior. After that, a dynamic gate driver that supplies an adjustable gate voltage is proposed to shape the power losses, thus mitigate thermal stress for lifetime improvement. Finally, the resulting semiconductor lifetime is estimated, which shows an improvement by a factor of two after applying the proposed strategy.
Original language | English |
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Title of host publication | 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe |
Publisher | Institute of Electrical and Electronics Engineers |
Number of pages | 8 |
ISBN (Electronic) | 9789075815313 |
DOIs | |
Publication status | Published - Sept 2019 |
Event | 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe - Via Magazzini del Cotone, Genova, Italy Duration: 3 Sept 2019 → 5 Sept 2019 Conference number: 21 http://epe-ecce-conferences.com/epe2019/ |
Conference
Conference | 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe |
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Abbreviated title | EPE 2019 ECCE |
Country/Territory | Italy |
City | Genova |
Period | 3/09/19 → 5/09/19 |
Internet address |
Keywords
- Conduction losses
- Device modeling
- Device simulation
- Intelligent Power Module
- MOSFET