Thermal Management for Wafer-Scale Heterogeneously Integrated InP Lasers on BCB

S. Abdi; A. Zozulia; Kevin A. Williams; Y. Jiao

doi:10.1109/ISLC57752.2024.10717400

Thermal Management for Wafer-Scale Heterogeneously Integrated InP Lasers on BCB

S. Abdi (Corresponding author), A. Zozulia, Kevin A. Williams, Y. Jiao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

Heat dissipation from III-V based heterogeneously integrated lasers is challenging in the presence of the thermally isolating bonding layer. Herein, we explore two ways to improve heat dissipation of devices bonded with benzocyclobutene (BCB): bonding with ultra-thin BCB on a SiC substrate, and thick metal vias connecting lasers to a Si substrate, both resulted in 2× improved heat dissipation compared to devices without a conductive connection to the heat sink.

Original language	English
Title of host publication	2024 IEEE 29th International Semiconductor Laser Conference, ISLC 2024
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	979-8-3503-7299-1
DOIs	https://doi.org/10.1109/ISLC57752.2024.10717400
Publication status	Published - 24 Oct 2024
Event	29th IEEE International Semiconductor Laser Conference, ISLC 2024 - Orlando, United States Duration: 29 Sept 2024 → 2 Oct 2024

Conference

Conference	29th IEEE International Semiconductor Laser Conference, ISLC 2024
Country/Territory	United States
City	Orlando
Period	29/09/24 → 2/10/24

Keywords

BCB bonding
heat management
heterogeneous integration
InP lasers
thermal impedance

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10.1109/ISLC57752.2024.10717400

Cite this

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title = "Thermal Management for Wafer-Scale Heterogeneously Integrated InP Lasers on BCB",

abstract = "Heat dissipation from III-V based heterogeneously integrated lasers is challenging in the presence of the thermally isolating bonding layer. Herein, we explore two ways to improve heat dissipation of devices bonded with benzocyclobutene (BCB): bonding with ultra-thin BCB on a SiC substrate, and thick metal vias connecting lasers to a Si substrate, both resulted in 2× improved heat dissipation compared to devices without a conductive connection to the heat sink.",

keywords = "BCB bonding, heat management, heterogeneous integration, InP lasers, thermal impedance",

author = "S. Abdi and A. Zozulia and Williams, {Kevin A.} and Y. Jiao",

year = "2024",

month = oct,

day = "24",

doi = "10.1109/ISLC57752.2024.10717400",

language = "English",

booktitle = "2024 IEEE 29th International Semiconductor Laser Conference, ISLC 2024",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "29th IEEE International Semiconductor Laser Conference, ISLC 2024 ; Conference date: 29-09-2024 Through 02-10-2024",

}

Abdi, S , Zozulia, A , Williams, KA & Jiao, Y 2024, Thermal Management for Wafer-Scale Heterogeneously Integrated InP Lasers on BCB. in 2024 IEEE 29th International Semiconductor Laser Conference, ISLC 2024., 10717400, Institute of Electrical and Electronics Engineers, 29th IEEE International Semiconductor Laser Conference, ISLC 2024, Orlando, United States, 29/09/24. https://doi.org/10.1109/ISLC57752.2024.10717400

Thermal Management for Wafer-Scale Heterogeneously Integrated InP Lasers on BCB. / Abdi, S. (Corresponding author); Zozulia, A.; Williams, Kevin A. et al.
2024 IEEE 29th International Semiconductor Laser Conference, ISLC 2024. Institute of Electrical and Electronics Engineers, 2024. 10717400.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Thermal Management for Wafer-Scale Heterogeneously Integrated InP Lasers on BCB

AU - Abdi, S.

AU - Zozulia, A.

AU - Williams, Kevin A.

AU - Jiao, Y.

PY - 2024/10/24

Y1 - 2024/10/24

N2 - Heat dissipation from III-V based heterogeneously integrated lasers is challenging in the presence of the thermally isolating bonding layer. Herein, we explore two ways to improve heat dissipation of devices bonded with benzocyclobutene (BCB): bonding with ultra-thin BCB on a SiC substrate, and thick metal vias connecting lasers to a Si substrate, both resulted in 2× improved heat dissipation compared to devices without a conductive connection to the heat sink.

AB - Heat dissipation from III-V based heterogeneously integrated lasers is challenging in the presence of the thermally isolating bonding layer. Herein, we explore two ways to improve heat dissipation of devices bonded with benzocyclobutene (BCB): bonding with ultra-thin BCB on a SiC substrate, and thick metal vias connecting lasers to a Si substrate, both resulted in 2× improved heat dissipation compared to devices without a conductive connection to the heat sink.

KW - BCB bonding

KW - heat management

KW - heterogeneous integration

KW - InP lasers

KW - thermal impedance

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U2 - 10.1109/ISLC57752.2024.10717400

DO - 10.1109/ISLC57752.2024.10717400

M3 - Conference contribution

AN - SCOPUS:85208633285

BT - 2024 IEEE 29th International Semiconductor Laser Conference, ISLC 2024

PB - Institute of Electrical and Electronics Engineers

T2 - 29th IEEE International Semiconductor Laser Conference, ISLC 2024

Y2 - 29 September 2024 through 2 October 2024

ER -

Thermal Management for Wafer-Scale Heterogeneously Integrated InP Lasers on BCB

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Keywords

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