Abstract
In this paper we numerically investigate the thermal crosstalk reduction that
can be obtained by etching deep trenches in Indium Phosphide based photonic
integrated circuits. We show how deep trenches between adjacent components inod(j5.’
the heat transfer path. The current injected in active components and the geometly of
the trenches are the parameters considered in our analysis. We demonstrate how the
geometry of the trenches play a role in the reduction of the thermal crosstalk. The
nwnerical results show a reduction of the distance between components up to 50%.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 18th Annual Symposium of the IEEE Photonics Society Benelux Chapter, 25-26 November 2013, Technische Universiteit Eindhoven |
| Editors | X. Leijtens, D. Pustakhod |
| Place of Publication | Eindhoven |
| Publisher | Eindhoven University of Technology |
| Pages | 155-158 |
| ISBN (Print) | 978-90-386-3512-5 |
| Publication status | Published - 2013 |