Theoretical and experimental investigation of doped-channel p-type quantum wells

R. van Dalen, C. Roberts, P.M. Koenraad, J.J. Harris

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Abstract

The influence of ionized impurity scattering on the hole mobility in d-doped-channel AlGaAs-InGaAs quantum wells is investigated. Improvements by a factor of 2.5 were observed experimentally when moving a d-doped impurity plane across the quantum well towards an interface, highlighting the scope of selective doping and wave-function engineering techniques to enhance the transport mobility of such devices. Theoretical hole mobility calculations were performed and reveal an overestimation of the transport mobility, common to the random-phase approximation (RPA), that is much stronger for p-type structures than for n-type structures. This effect is partially attributed to an underestimation of the screening charge distribution width. Using a lower limit for this distribution of around 50 Å, it is shown that the RPA can provide accurate predictions between samples with different impurity distributions and densities.
Original languageEnglish
Pages (from-to)4445-4448
JournalPhysical Review B
Volume61
Issue number7
DOIs
Publication statusPublished - 2000

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