The use of Abell-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

V. Haxha; R. Garg; M.A. Migliorato; I.W.D. Drouzas; J.M. Ulloa; P.M. Koenraad; M.J. Steer; H.Y. Liu; M. Hopkinson; D.J. Mowbray

doi:10.1007/s11082-009-9276-3

The use of Abell-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

V. Haxha, R. Garg, M.A. Migliorato, I.W.D. Drouzas, J.M. Ulloa, P.M. Koenraad, M.J. Steer, H.Y. Liu, M. Hopkinson, D.J. Mowbray

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Abstract

In this paper we show the use of an optimally parameterized empirical potential of the Abell–Tersoff type to study the strain energy of the quaternary alloy InGaAsSb. We use our results to compute modified segregation energies in an improved kinetic model of segregation for the combined effects of group III and V exchange processes during pitaxial growth and compare with experimental data from Scanning Tunnelling Microscopy.

Original language	English
Pages (from-to)	1143-1148
Journal	Optical and Quantum Electronics
Volume	40
Issue number	14-15
DOIs	https://doi.org/10.1007/s11082-009-9276-3
Publication status	Published - 2008

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title = "The use of Abell-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs",

abstract = "In this paper we show the use of an optimally parameterized empirical potential of the Abell–Tersoff type to study the strain energy of the quaternary alloy InGaAsSb. We use our results to compute modified segregation energies in an improved kinetic model of segregation for the combined effects of group III and V exchange processes during pitaxial growth and compare with experimental data from Scanning Tunnelling Microscopy.",

author = "V. Haxha and R. Garg and M.A. Migliorato and I.W.D. Drouzas and J.M. Ulloa and P.M. Koenraad and M.J. Steer and H.Y. Liu and M. Hopkinson and D.J. Mowbray",

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doi = "10.1007/s11082-009-9276-3",

language = "English",

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TY - JOUR

T1 - The use of Abell-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

AU - Haxha, V.

AU - Garg, R.

AU - Migliorato, M.A.

AU - Drouzas, I.W.D.

AU - Ulloa, J.M.

AU - Koenraad, P.M.

AU - Steer, M.J.

AU - Liu, H.Y.

AU - Hopkinson, M.

AU - Mowbray, D.J.

PY - 2008

Y1 - 2008

N2 - In this paper we show the use of an optimally parameterized empirical potential of the Abell–Tersoff type to study the strain energy of the quaternary alloy InGaAsSb. We use our results to compute modified segregation energies in an improved kinetic model of segregation for the combined effects of group III and V exchange processes during pitaxial growth and compare with experimental data from Scanning Tunnelling Microscopy.

AB - In this paper we show the use of an optimally parameterized empirical potential of the Abell–Tersoff type to study the strain energy of the quaternary alloy InGaAsSb. We use our results to compute modified segregation energies in an improved kinetic model of segregation for the combined effects of group III and V exchange processes during pitaxial growth and compare with experimental data from Scanning Tunnelling Microscopy.

U2 - 10.1007/s11082-009-9276-3

DO - 10.1007/s11082-009-9276-3

M3 - Article

SN - 0306-8919

VL - 40

SP - 1143

EP - 1148

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 14-15

ER -

The use of Abell-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

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