The use of Abell-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

V. Haxha, R. Garg, M.A. Migliorato, I.W.D. Drouzas, J.M. Ulloa, P.M. Koenraad, M.J. Steer, H.Y. Liu, M. Hopkinson, D.J. Mowbray

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Abstract

In this paper we show the use of an optimally parameterized empirical potential of the Abell–Tersoff type to study the strain energy of the quaternary alloy InGaAsSb. We use our results to compute modified segregation energies in an improved kinetic model of segregation for the combined effects of group III and V exchange processes during pitaxial growth and compare with experimental data from Scanning Tunnelling Microscopy.
Original languageEnglish
Pages (from-to)1143-1148
JournalOptical and Quantum Electronics
Volume40
Issue number14-15
DOIs
Publication statusPublished - 2008

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