The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs

V. Haxha; R. Garg; M.A. Migliorato; I.W.D. Drouzas; J.M. Ulloa Herrero; P.M. Koenraad; M.J. Steer; H.Y. Liu; M. Hopkinson; D.J. Mowbray

doi:10.1109/NUSOD.2008.4668267

The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs

V. Haxha, R. Garg, M.A. Migliorato, I.W.D. Drouzas, J.M. Ulloa Herrero, P.M. Koenraad, M.J. Steer, H.Y. Liu, M. Hopkinson, D.J. Mowbray

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.

Original language	English
Title of host publication	2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 1-4 Sept. 2008, Nottingham, UK
Place of Publication	Nottingham
Publisher	Institute of Electrical and Electronics Engineers
Pages	111-112
ISBN (Print)	978-1-4244-2307-1
DOIs	https://doi.org/10.1109/NUSOD.2008.4668267
Publication status	Published - 2008

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10.1109/NUSOD.2008.4668267

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Haxha, V., Garg, R., Migliorato, M. A., Drouzas, I. W. D., Ulloa Herrero, J. M., Koenraad, P. M., Steer, M. J., Liu, H. Y., Hopkinson, M., & Mowbray, D. J. (2008). The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs. In 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 1-4 Sept. 2008, Nottingham, UK (pp. 111-112). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/NUSOD.2008.4668267

@inproceedings{38d769e0027d44c783e3c4dd26c1179c,

title = "The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs",

abstract = "In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.",

author = "V. Haxha and R. Garg and M.A. Migliorato and I.W.D. Drouzas and {Ulloa Herrero}, J.M. and P.M. Koenraad and M.J. Steer and H.Y. Liu and M. Hopkinson and D.J. Mowbray",

year = "2008",

doi = "10.1109/NUSOD.2008.4668267",

language = "English",

isbn = "978-1-4244-2307-1",

pages = "111--112",

booktitle = "2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 1-4 Sept. 2008, Nottingham, UK",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Haxha, V, Garg, R, Migliorato, MA, Drouzas, IWD, Ulloa Herrero, JM, Koenraad, PM, Steer, MJ, Liu, HY, Hopkinson, M & Mowbray, DJ 2008, The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs. in 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 1-4 Sept. 2008, Nottingham, UK. Institute of Electrical and Electronics Engineers, Nottingham, pp. 111-112. https://doi.org/10.1109/NUSOD.2008.4668267

The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs. / Haxha, V.; Garg, R.; Migliorato, M.A. et al.
2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 1-4 Sept. 2008, Nottingham, UK. Nottingham: Institute of Electrical and Electronics Engineers, 2008. p. 111-112.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs

AU - Haxha, V.

AU - Garg, R.

AU - Migliorato, M.A.

AU - Drouzas, I.W.D.

AU - Ulloa Herrero, J.M.

AU - Koenraad, P.M.

AU - Steer, M.J.

AU - Liu, H.Y.

AU - Hopkinson, M.

AU - Mowbray, D.J.

PY - 2008

Y1 - 2008

N2 - In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.

AB - In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.

U2 - 10.1109/NUSOD.2008.4668267

DO - 10.1109/NUSOD.2008.4668267

M3 - Conference contribution

SN - 978-1-4244-2307-1

SP - 111

EP - 112

BT - 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 1-4 Sept. 2008, Nottingham, UK

PB - Institute of Electrical and Electronics Engineers

CY - Nottingham

ER -

Haxha V, Garg R, Migliorato MA, Drouzas IWD, Ulloa Herrero JM, Koenraad PM et al. The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs. In 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 1-4 Sept. 2008, Nottingham, UK. Nottingham: Institute of Electrical and Electronics Engineers. 2008. p. 111-112 doi: 10.1109/NUSOD.2008.4668267

The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs

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