The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs

V. Haxha, R. Garg, M.A. Migliorato, I.W.D. Drouzas, J.M. Ulloa Herrero, P.M. Koenraad, M.J. Steer, H.Y. Liu, M. Hopkinson, D.J. Mowbray

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.
Original languageEnglish
Title of host publication2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 1-4 Sept. 2008, Nottingham, UK
Place of PublicationNottingham
PublisherInstitute of Electrical and Electronics Engineers
ISBN (Print)978-1-4244-2307-1
Publication statusPublished - 2008


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