Laterally coupled laser-diode pairs, also called "twin stripe lasers", are coupled by means of the evanescent em-field in between two dielectric laser cavities. The coupling strength between the two lasers is determined by the decay length of this evanescent em-field. This length depends on the indices of refraction of the material which separates the two cavities compared to the cavity material. However the index of refraction of the cavity material also depends on the inversion density in the lasing material. Therefore the coupling coefficient in the rate equation for the twin stripe device can be written as ¿0[1 + 1/2(ac(1) ¿1 + ac(2) ¿2)], where ¿1 and ¿2 are the inversion densities in the two stripes. We give an expression for ac>(i) in terms of the properties of the device.
|Name||Proceedings of SPIE|
|Conference||conference; Semiconducter lasers and laser dynamics|
|Period||1/01/04 → …|
|Other||Semiconducter lasers and laser dynamics|