Abstract
The etching of Si wafers in an RF discharge in CF4 has been studied using single-wavelength ellipsometry. The etch rate was measured as a function of surface temperature at two pressures. Only at high pressure (0,36 Torr) a small temperature effect was found. Furthermore, the existence of a modified top layer is suggested by the results of the measurements.
Original language | English |
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Pages (from-to) | 279-282 |
Number of pages | 4 |
Journal | Contributions to Plasma Physics |
Volume | 31 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1991 |