The temperature dependence of the etch rate of silicon measured by ellipsometry

M. Haverlag, H. Kersten, G.M.W. Kroesen, F.J. Hoog, de, A. Rutscher

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Abstract

The etching of Si wafers in an RF discharge in CF4 has been studied using single-wavelength ellipsometry. The etch rate was measured as a function of surface temperature at two pressures. Only at high pressure (0,36 Torr) a small temperature effect was found. Furthermore, the existence of a modified top layer is suggested by the results of the measurements.
Original languageEnglish
Pages (from-to)279-282
Number of pages4
JournalContributions to Plasma Physics
Volume31
Issue number3
DOIs
Publication statusPublished - 1991

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