The temperature dependence of the etch rate of silicon measured by ellipsometry

M. Haverlag; H. Kersten; G.M.W. Kroesen; F.J. Hoog, de; A. Rutscher

doi:10.1002/ctpp.2150310303

The temperature dependence of the etch rate of silicon measured by ellipsometry

M. Haverlag, H. Kersten, G.M.W. Kroesen, F.J. Hoog, de, A. Rutscher

Elementary Processes in Gas Discharges

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Abstract

The etching of Si wafers in an RF discharge in CF4 has been studied using single-wavelength ellipsometry. The etch rate was measured as a function of surface temperature at two pressures. Only at high pressure (0,36 Torr) a small temperature effect was found. Furthermore, the existence of a modified top layer is suggested by the results of the measurements.

Original language	English
Pages (from-to)	279-282
Number of pages	4
Journal	Contributions to Plasma Physics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1002/ctpp.2150310303
Publication status	Published - 1991

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title = "The temperature dependence of the etch rate of silicon measured by ellipsometry",

abstract = "The etching of Si wafers in an RF discharge in CF4 has been studied using single-wavelength ellipsometry. The etch rate was measured as a function of surface temperature at two pressures. Only at high pressure (0,36 Torr) a small temperature effect was found. Furthermore, the existence of a modified top layer is suggested by the results of the measurements.",

author = "M. Haverlag and H. Kersten and G.M.W. Kroesen and {Hoog, de}, F.J. and A. Rutscher",

year = "1991",

doi = "10.1002/ctpp.2150310303",

language = "English",

volume = "31",

pages = "279--282",

journal = "Contributions to Plasma Physics",

issn = "0863-1042",

publisher = "Wiley-VCH Verlag",

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T1 - The temperature dependence of the etch rate of silicon measured by ellipsometry

AU - Haverlag, M.

AU - Kersten, H.

AU - Kroesen, G.M.W.

AU - Hoog, de, F.J.

AU - Rutscher, A.

PY - 1991

Y1 - 1991

N2 - The etching of Si wafers in an RF discharge in CF4 has been studied using single-wavelength ellipsometry. The etch rate was measured as a function of surface temperature at two pressures. Only at high pressure (0,36 Torr) a small temperature effect was found. Furthermore, the existence of a modified top layer is suggested by the results of the measurements.

AB - The etching of Si wafers in an RF discharge in CF4 has been studied using single-wavelength ellipsometry. The etch rate was measured as a function of surface temperature at two pressures. Only at high pressure (0,36 Torr) a small temperature effect was found. Furthermore, the existence of a modified top layer is suggested by the results of the measurements.

U2 - 10.1002/ctpp.2150310303

DO - 10.1002/ctpp.2150310303

M3 - Article

SN - 0863-1042

VL - 31

SP - 279

EP - 282

JO - Contributions to Plasma Physics

JF - Contributions to Plasma Physics

IS - 3

ER -

The temperature dependence of the etch rate of silicon measured by ellipsometry

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