The scalability of AlGaN/GaN HEMTs

B. Jacobs, F. Karouta, R. Crane, P.R. Hageman

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Original languageEnglish
Title of host publicationFirst Workshop on GaN Electronic Devices
Publication statusPublished - 1999
Eventconference; First Workshop on GaN Electronic Devices, Ithaca, NY, 16-17 August -
Duration: 1 Jan 1999 → …

Conference

Conferenceconference; First Workshop on GaN Electronic Devices, Ithaca, NY, 16-17 August
Period1/01/99 → …
OtherFirst Workshop on GaN Electronic Devices, Ithaca, NY, 16-17 August

Cite this

Jacobs, B., Karouta, F., Crane, R., & Hageman, P. R. (1999). The scalability of AlGaN/GaN HEMTs. In First Workshop on GaN Electronic Devices