The role of surface charging and potential redistribution on the kinetics of hole injection reactions at n-GaAs

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Abstract

The dissolution rate of GaAs in alkaline solutions in the pH range 11–14 was shown to be limited by OH- diffusion in the solution. The kinetics of the hole injection from an oxidizing agent in solution into the valence band of n-GaAs changes when the hole injection rate is larger than the dissolution rate. In this study Fe(CN)3-6 was used as an oxidizing agent. From the results of impedance measurements it was shown that, due to interface charging effects, a shift of the semiconductor band edges of more than 0.5 V reduces drastically the overlap between the valence band and the distribution function of Fe(CN)3-6; the hole injection reaction becomes kinetically controlled. Photoanodic dissolution of n-GaAs also influences the kinetics of the hole injection from solution. At higher light intensities the rate of reduction of the oxidizing agent can be reduced almost to zero.
Original languageEnglish
Pages (from-to)575-581
Number of pages7
JournalElectrochimica Acta
Volume32
Issue number4
DOIs
Publication statusPublished - 1987

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