The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer

B.J. Pawlak, W. Vandervorst, R. Lindsay, I. De Wolf, F. Roozeboom, R. Delhougne, A. Benedetti, R. Loo, M. Caymax, K. Maex, N.E.B. Cowern

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

The role of amorphization during ultra shallow junction formation on strained Si layers grown on SiGe buffer was investigated. Two dopant activation technique such as temperature solid phase epitaxial regrowth (SPER) and high temperature conventional spike were used. 8nm strained silicon layers were epi-grown by chemical vapor deposition (CVD) on strain relaxed Si 0.8Ge0.2 layers. It was observed that implantation and amorphization removes efficiently strain in the extension.

Original languageEnglish
Title of host publicationHigh-Mobility Group-IV Materials and Devices
Place of PublicationWarrendale
PublisherMaterials Research Society
Pages281-286
Number of pages6
DOIs
Publication statusPublished - 1 Dec 2004
Externally publishedYes
EventHigh-Mobility Group-IV Materials and Devices - San Francisco, CA, United States
Duration: 13 Apr 200415 Apr 2004

Publication series

NameMaterials Research Society Symposium Proceedings
Volume809
ISSN (Print)0272-9172

Conference

ConferenceHigh-Mobility Group-IV Materials and Devices
Country/TerritoryUnited States
CitySan Francisco, CA
Period13/04/0415/04/04

Fingerprint

Dive into the research topics of 'The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer'. Together they form a unique fingerprint.

Cite this