@inproceedings{8f84c3588326431d9801ce2b111ec660,
title = "The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer",
abstract = "The role of amorphization during ultra shallow junction formation on strained Si layers grown on SiGe buffer was investigated. Two dopant activation technique such as temperature solid phase epitaxial regrowth (SPER) and high temperature conventional spike were used. 8nm strained silicon layers were epi-grown by chemical vapor deposition (CVD) on strain relaxed Si 0.8Ge0.2 layers. It was observed that implantation and amorphization removes efficiently strain in the extension.",
author = "B.J. Pawlak and W. Vandervorst and R. Lindsay and {De Wolf}, I. and F. Roozeboom and R. Delhougne and A. Benedetti and R. Loo and M. Caymax and K. Maex and N.E.B. Cowern",
year = "2004",
month = dec,
day = "1",
doi = "10.1557/PROC-809-B9.6.1/C9.6",
language = "English",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "281--286",
booktitle = "High-Mobility Group-IV Materials and Devices",
address = "United States",
note = "High-Mobility Group-IV Materials and Devices ; Conference date: 13-04-2004 Through 15-04-2004",
}