The role of ion-bulk interactions during high rate deposition of microcrystalline silicon by means of the multi-hole-cathode VHF plasma

A.H.M. Smets, M. Kondo

Research output: Contribution to journalArticleAcademicpeer-review

19 Citations (Scopus)

Abstract

The high rate deposition of microcryst. silicon (micro c-Si:H) by means of the novel multi-hole-cathode very high frequency (MHC-VHF) plasma technique has been studied in the high-pressure depletion region (9.3 Torr). A distinct relationship between vacancy incorporation, the cryst. vol. fraction and a qual. measurement of the energy of the ions bombarding the substrate has been found. The obsd. relation is explained with the help of an ion-phase-diagram: we claim that the most energetic ions, contg. at least one silicon atom, are responsible for the local amorphization of the micro c-Si:H films via the ion induced Si bulk displacement mechanism. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)937-940
JournalJournal of Non-Crystalline Solids
Volume352
Issue number9-20
DOIs
Publication statusPublished - 2006

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