The role of dot height in determining exciton lifetimes in shallow InAs/GaAs quantum dots

T.E.J. Campbell-Ricketts, N.A.J.M. Kleemans, R. Nötzel, A.Yu. Silov, P.M. Koenraad

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)
110 Downloads (Pure)

Abstract

The spectral dependence of the photoluminescence recombination lifetime has been measured for individual self-assembled InGaAs/GaAs quantum dots, over the entire emission envelope. The measurements show a rising trend with increasing emission wavelength, increasing from 680 ps at 900 nm to about 1020 ps at 990 nm. Measurements of the out-of-plane diamagnetic coefficients for the dots show almost no correlation with wavelength. As a result, the rising trend in the lifetimes with wavelength is interpreted in terms of the emission energy being predominantly determined by the dot height, with higher dots exhibiting longer lifetimes. © 2010 American Institute of Physics. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 033102
Original languageEnglish
Article number033102
Pages (from-to)033102-1/3
Number of pages3
JournalApplied Physics Letters
Volume96
Issue number3
DOIs
Publication statusPublished - 2010

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