The potential and restrictions of the double derivative method for threshold voltage extraction in SOI MOST's

E. Simoen, E.P. Vandamme, A.L.P. Rotondaro, C. Claeys

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Original languageEnglish
Title of host publicationProc. ECS Spring Meeting, 6th International Symposium on Silicon-on-Insulator Technology and Devices
PublisherElectrochemical Society
Pages858-859
Publication statusPublished - 1994
EventECS Spring Meeting, 6th International Symposium on Silicon-on-Insulator Technology and Devices, San Francisco, CA, May 1994 -
Duration: 1 Jan 1994 → …

Conference

ConferenceECS Spring Meeting, 6th International Symposium on Silicon-on-Insulator Technology and Devices, San Francisco, CA, May 1994
Period1/01/94 → …

Cite this

Simoen, E., Vandamme, E. P., Rotondaro, A. L. P., & Claeys, C. (1994). The potential and restrictions of the double derivative method for threshold voltage extraction in SOI MOST's. In Proc. ECS Spring Meeting, 6th International Symposium on Silicon-on-Insulator Technology and Devices (pp. 858-859). Electrochemical Society.