The pn-Junction as an inductive design component in silicon IC processes

G.A.M. Hurkx; P.G.M. Baltus; J.A.M. de Boet; J.A.M. Geelen; J.J.E.M. Hageraats

doi:10.1109/BIPOL.1995.493880

The pn-Junction as an inductive design component in silicon IC processes

G.A.M. Hurkx
, P.G.M. Baltus
, J.A.M. de Boet
, J.A.M. Geelen
, J.J.E.M. Hageraats

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated.

Original language	English
Title of host publication	Proceedings of Bipolar/Bicmos Circuits and Technology Meeting
Publisher	Institute of Electrical and Electronics Engineers
Pages	125-128
Number of pages	4
ISBN (Print)	0-7803-2778-0
DOIs	https://doi.org/10.1109/BIPOL.1995.493880
Publication status	Published - 6 Aug 2020
Externally published	Yes
Event	1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, United States Duration: 2 Oct 1995 → 3 Oct 1995

Conference

Conference	1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Country/Territory	United States
City	Minneapolis
Period	2/10/95 → 3/10/95

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10.1109/BIPOL.1995.493880

Cite this

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title = "The pn-Junction as an inductive design component in silicon IC processes",

abstract = "pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated.",

author = "G.A.M. Hurkx and P.G.M. Baltus and \{de Boet\}, J.A.M. and J.A.M. Geelen and J.J.E.M. Hageraats",

year = "2020",

month = aug,

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doi = "10.1109/BIPOL.1995.493880",

language = "English",

isbn = "0-7803-2778-0",

pages = "125--128",

booktitle = "Proceedings of Bipolar/Bicmos Circuits and Technology Meeting",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ; Conference date: 02-10-1995 Through 03-10-1995",

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Hurkx, GAM, Baltus, PGM, de Boet, JAM, Geelen, JAM & Hageraats, JJEM 2020, The pn-Junction as an inductive design component in silicon IC processes. in Proceedings of Bipolar/Bicmos Circuits and Technology Meeting., 493880, Institute of Electrical and Electronics Engineers, pp. 125-128, 1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, Minnesota, United States, 2/10/95. https://doi.org/10.1109/BIPOL.1995.493880

The pn-Junction as an inductive design component in silicon IC processes. / Hurkx, G.A.M.; Baltus, P.G.M.; de Boet, J.A.M. et al.
Proceedings of Bipolar/Bicmos Circuits and Technology Meeting. Institute of Electrical and Electronics Engineers, 2020. p. 125-128 493880.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - de Boet, J.A.M.

AU - Geelen, J.A.M.

AU - Hageraats, J.J.E.M.

PY - 2020/8/6

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AB - pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated.

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DO - 10.1109/BIPOL.1995.493880

M3 - Conference contribution

SN - 0-7803-2778-0

SP - 125

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BT - Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

PB - Institute of Electrical and Electronics Engineers

T2 - 1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Y2 - 2 October 1995 through 3 October 1995

ER -

The pn-Junction as an inductive design component in silicon IC processes

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