The physical properties of grown p-i-n junctions in silicon carbide

C.A.A.J. Greebe

Research output: ThesisPhd Thesis 1 (Research TU/e / Graduation TU/e)

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Original languageEnglish
QualificationDoctor of Philosophy
Awarding Institution
  • Applied Physics
Supervisors/Advisors
  • Diemer, G., Promotor
Award date29 Jun 1962
Place of PublicationEindhoven
Publisher
DOIs
Publication statusPublished - 1962

Bibliographical note

Proefschrift.

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