The physical properties of grown p-i-n junctions in silicon carbide

C.A.A.J. Greebe

Research output: Thesis › Phd Thesis 1 (Research TU/e / Graduation TU/e)

497 Downloads (Pure)

Original language	English
Qualification	Doctor of Philosophy
Awarding Institution	Applied Physics and Science Education
Supervisors/Advisors	Diemer, G., Promotor
Award date	29 Jun 1962
Place of Publication	Eindhoven
Publisher	Technische Hogeschool Eindhoven
DOIs	https://doi.org/10.6100/IR117420
Publication status	Published - 1962

Proefschrift.

Access to Document

@phdthesis{c69718e2bff04c9fa60892e12fdac993,

title = "The physical properties of grown p-i-n junctions in silicon carbide",

author = "C.A.A.J. Greebe",

note = "Proefschrift.",

year = "1962",

doi = "10.6100/IR117420",

language = "English",

publisher = "Technische Hogeschool Eindhoven",

type = "Phd Thesis 1 (Research TU/e / Graduation TU/e)",

school = "Applied Physics and Science Education",

}