The optimum oxidation state of AlOx magnetic tunnel junctions

M. F. Gillies; W. Oepts; A. E. T. Kuiper; R. Coehoorn; Y. Tamminga; J.H.M. Snijders; W.M. Arnold Bik

doi:10.1109/INTMAG.1999.837161

The optimum oxidation state of AlOx magnetic tunnel junctions

M. F. Gillies, W. Oepts, A. E. T. Kuiper, R. Coehoorn, Y. Tamminga, J.H.M. Snijders, W.M. Arnold Bik

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The O-content of the Al layer in AlO_x was determined by Rutherford Backscattering Spectrometry (RBS). The 35 s oxidation time gave enough O for the Al-oxide to be stoichiometric. Further, the bias dependence was obtained for 40 s oxidation time. These results indicate that a stoichiometric oxide is advantageous for obtaining a small bias dependence of the MR ratio.

Original language	English
Title of host publication	1999 IEEE International Magnetics Conference (INTERMAG)
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	1
ISBN (Print)	07803555555
DOIs	https://doi.org/10.1109/INTMAG.1999.837161
Publication status	Published - 1 Dec 1999
Externally published	Yes
Event	1999 IEEE International Magnetics Conference, Intermag 99 - Kyongju, South Korea Duration: 18 May 1999 → 21 May 1999

Conference

Conference	1999 IEEE International Magnetics Conference, Intermag 99
City	Kyongju, South Korea
Period	18/05/99 → 21/05/99

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10.1109/INTMAG.1999.837161

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title = "The optimum oxidation state of AlOx magnetic tunnel junctions",

abstract = "The O-content of the Al layer in AlOx was determined by Rutherford Backscattering Spectrometry (RBS). The 35 s oxidation time gave enough O for the Al-oxide to be stoichiometric. Further, the bias dependence was obtained for 40 s oxidation time. These results indicate that a stoichiometric oxide is advantageous for obtaining a small bias dependence of the MR ratio.",

author = "Gillies, {M. F.} and W. Oepts and Kuiper, {A. E. T.} and R. Coehoorn and Y. Tamminga and J.H.M. Snijders and Bik, {W.M. Arnold}",

year = "1999",

month = dec,

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doi = "10.1109/INTMAG.1999.837161",

language = "English",

isbn = "07803555555",

booktitle = "1999 IEEE International Magnetics Conference (INTERMAG)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "1999 IEEE International Magnetics Conference, Intermag 99 ; Conference date: 18-05-1999 Through 21-05-1999",

}

Gillies, MF, Oepts, W, Kuiper, AET, Coehoorn, R, Tamminga, Y, Snijders, JHM & Bik, WMA 1999, The optimum oxidation state of AlOx magnetic tunnel junctions. in 1999 IEEE International Magnetics Conference (INTERMAG)., AE-10, Institute of Electrical and Electronics Engineers, Piscataway, 1999 IEEE International Magnetics Conference, Intermag 99, Kyongju, South Korea, 18/05/99. https://doi.org/10.1109/INTMAG.1999.837161

TY - GEN

T1 - The optimum oxidation state of AlOx magnetic tunnel junctions

AU - Gillies, M. F.

AU - Oepts, W.

AU - Kuiper, A. E. T.

AU - Coehoorn, R.

AU - Tamminga, Y.

AU - Snijders, J.H.M.

AU - Bik, W.M. Arnold

PY - 1999/12/1

Y1 - 1999/12/1

N2 - The O-content of the Al layer in AlOx was determined by Rutherford Backscattering Spectrometry (RBS). The 35 s oxidation time gave enough O for the Al-oxide to be stoichiometric. Further, the bias dependence was obtained for 40 s oxidation time. These results indicate that a stoichiometric oxide is advantageous for obtaining a small bias dependence of the MR ratio.

AB - The O-content of the Al layer in AlOx was determined by Rutherford Backscattering Spectrometry (RBS). The 35 s oxidation time gave enough O for the Al-oxide to be stoichiometric. Further, the bias dependence was obtained for 40 s oxidation time. These results indicate that a stoichiometric oxide is advantageous for obtaining a small bias dependence of the MR ratio.

UR - http://www.scopus.com/inward/record.url?scp=0033301054&partnerID=8YFLogxK

U2 - 10.1109/INTMAG.1999.837161

DO - 10.1109/INTMAG.1999.837161

M3 - Conference contribution

AN - SCOPUS:0033301054

SN - 07803555555

BT - 1999 IEEE International Magnetics Conference (INTERMAG)

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 1999 IEEE International Magnetics Conference, Intermag 99

Y2 - 18 May 1999 through 21 May 1999

ER -

The optimum oxidation state of AlOx magnetic tunnel junctions

Abstract

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