Abstract
The availability of a reliable memory element is crucial for the fabrication of ‘plastic’ logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm2.
| Original language | English |
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| Pages (from-to) | 147-152 |
| Number of pages | 5 |
| Journal | Organic Electronics |
| Volume | 13 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2012 |