The minority carrier recombination resistance : a useful concept in semiconductor electrochemistry

J.E.A.M. Meerakker, van de, J.J. Kelly, P.H.L. Notten

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

The impedance characteristics for redox reactions involving minority carrier recombination at semiconductor electrodes differ markedly from those involving majority carriers. In this work, holes were generated in the valence band ofn-GaAs by illumination or injection from solution. A recombination resistance is used to characterize the process bywhich these holes recombine with electrons from the conduction band. This resistance is shown to be independent ofthe method of hole generation, the pH of the solution, and the nature of the injecting species, but dependent on the generation rate.
Original languageEnglish
Pages (from-to)638-642
JournalJournal of the Electrochemical Society
Volume132
Issue number3
DOIs
Publication statusPublished - 1985

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